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X
Dabiran, A. M.
~ 100  Ergebnisse:
Personensuche X
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1

Improvement of electroluminescent performance of n-ZnO/AlN/..:

Zhang, S. G. ; Zhang, X. W. ; Yin, Z. G....
Journal of Applied Physics.  109 (2011)  9 - p. , 2011
Link: https://doi.org/10.1063/..
 
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2

Detection of an endocrine disrupter biomarker, vitellogenin..:

Chu, Byung Hwan ; Chang, C. Y. ; Kroll, Kevin...
Applied Physics Letters.  96 (2010)  1 - p. , 2010
Link: https://doi.org/10.1063/..
 
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3

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojun..:

You, J. B. ; Zhang, X. W. ; Zhang, S. G....
Applied Physics Letters.  96 (2010)  20 - p. , 2010
Link: https://doi.org/10.1063/..
 
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4

Enhanced electroluminescence from ZnO‐based heterojunction ..:

Zhang, S. G. ; Zhang, X. W. ; Wang, J. X....
physica status solidi (RRL) – Rapid Research Letters.  5 (2010)  2 - p. 74-76 , 2010
Link: https://doi.org/10.1002/..
 
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5

Electrical and optical properties of Fe doped AlGaN grown b..:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
Journal of Applied Physics.  107 (2010)  2 - p. , 2010
Link: https://doi.org/10.1063/..
 
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6

Alpha particle detection with GaN Schottky diodes:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
Journal of Applied Physics.  106 (2009)  10 - p. , 2009
Link: https://doi.org/10.1063/..
 
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7

Comparison of electrical properties and deep traps in p-Alx..:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
Journal of Applied Physics.  106 (2009)  7 - p. , 2009
Link: https://doi.org/10.1063/..
 
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8

Development of enhancement mode AlN/GaN high electron mobil..:

Chang, C. Y. ; Pearton, S. J. ; Lo, C. F....
Applied Physics Letters.  94 (2009)  26 - p. , 2009
Link: https://doi.org/10.1063/..
 
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9

Electrical properties of GaN (Fe) buffers for AlGaN∕GaN hig..:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
Applied Physics Letters.  92 (2008)  4 - p. , 2008
Link: https://doi.org/10.1063/..
 
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10

Electron irradiation of AlGaN∕GaN and AlN∕GaN heterojunctio..:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
Applied Physics Letters.  93 (2008)  15 - p. , 2008
Link: https://doi.org/10.1063/..
 
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11

Very high channel conductivity in low-defect AlN/GaN high e..:

Dabiran, A. M. ; Wowchak, A. M. ; Osinsky, A....
Applied Physics Letters.  93 (2008)  8 - p. , 2008
Link: https://doi.org/10.1063/..
 
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12

Electrical and structural properties of AlN/GaN and AlGaN/G..:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
Journal of Applied Physics.  104 (2008)  5 - p. , 2008
Link: https://doi.org/10.1063/..
 
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13

Optical and morphological properties of MBE grown wurtzite ..:

Mares, J.W. ; Ruhge, F.R. ; Thompson, A.V....
Optical Materials.  30 (2007)  2 - p. 346-350 , 2007
Link: https://doi.org/10.1016/..
 
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14

Deep traps responsible for hysteresis in capacitance-voltag..:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
Applied Physics Letters.  91 (2007)  23 - p. , 2007
Link: https://doi.org/10.1063/..
 
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15

Development of MgZnO-ZnO-AlGaN heterostructures for ultravi..:

Dong, J. W. ; Osinsky, A. ; Hertog, B....
Journal of Electronic Materials.  34 (2005)  4 - p. 416-423 , 2005
Link: https://doi.org/10.1007/..
 
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