E-LIB Suche - Ergebnisse für: Daga, O. P.

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Physica status solidi

Volume 106, Number 1: March 16 Physica status solidi ; Volume 106, Number 1, A

Aboyan, A. O ; Akshakyan, E . Z ; Ascheron, C... - Reprint 2021 . , [2021]

Link: https://doi.org/10.1515/..

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Physica status solidi

Volume 61, Number 1: January 1 Physica status solidi ; Volume 61, Number 1, B

Agrawal, Bal K ; Andrew, J. W ; Balslev, I... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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High Power 980-nm in GaAs/AlGaAs Strained Quantum Well Lase..:

Daga, O. P. ; Baby, Aji ; Kothari, H. S...
Journal of Optics. 31 (2002) 4 - p. 153-157 , 2002

Link: https://doi.org/10.1007/..

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Simple method for examining sulphur passivation of facets i..:

Beister, G. ; Maege, J. ; Gutsche, D....
Applied Physics Letters. 68 (1996) 18 - p. 2467-2468 , 1996

Link: https://doi.org/10.1063/..

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On the measurement of microwave absorption of bulk YBaCuO s..:

Singh, J K ; Kothari, H S ; Daga, O P..
Bulletin of Materials Science. 14 (1991) 3 - p. 793-796 , 1991

Link: https://doi.org/10.1007/..

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Irreversible Parametric Inductance Behaviour in High-Tc Sup..:

Kothari, H. S. ; Daga, O. P. ; Singh, J. K..
Physica Status Solidi (a). 124 (1991) 1 - p. K39-K43 , 1991

Link: https://doi.org/10.1002/..

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GaAs MESFET and related processes:

Daga, O P ; Singh, J K ; Singh, B R..
Bulletin of Materials Science. 13 (1990) 1-2 - p. 99-112 , 1990

Link: https://doi.org/10.1007/..

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X-ray diffraction and EDS analysis of Y1Ba2Cu3O9−y supercon..:

Singh, B. R. ; Kothari, H. S. ; Daga, O. P....
Physica Status Solidi (a). 106 (1988) 1 - p. K53-K56 , 1988

Link: https://doi.org/10.1002/..

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Air bridge and via hole technology for GaAs based microwave..:

Singh, J.K. ; Daga, O.P. ; Kothari, H.S...
Microelectronics Journal. 19 (1988) 5 - p. 23-27 , 1988

Link: https://doi.org/10.1016/..

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Improved Via Hole Etching for Source Grounding of Microwave..:

Daga, O. P. ; Fricke, K. ; Hartnagel, H. L.
Journal of The Electrochemical Society. 133 (1986) 12 - p. 2660-2661 , 1986

Link: https://doi.org/10.1149/..

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The role of surface treatment on the anodic oxidation of n-..:

Kochhar, Madhu ; Daga, O.P. ; Singh, B.R..
Microelectronics Reliability. 24 (1984) 4 - p. 629-631 , 1984

Link: https://doi.org/10.1016/..

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Characterisation of Se implanted layers for GaAs FETs:

Singh, B.R. ; Kochhar, Madhu ; Daga, O.P..
Microelectronics Reliability. 23 (1983) 5 - p. 857-861 , 1983

Link: https://doi.org/10.1016/..

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Interface properties of low-temperature-grown anodic oxide ..:

SINGH, B. R. ; DAGA, O. P. ; SHARMA, M. K..
International Journal of Electronics. 52 (1982) 1 - p. 3-12 , 1982

Link: https://doi.org/10.1080/..

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The effect of Al-GaAs interaction on the technology of self..:

Singh, B.R. ; Daga, O.P. ; Kochhar, Madhu.
Solid-State Electronics. 25 (1982) 12 - p. 1206-1209 , 1982

Link: https://doi.org/10.1016/..

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Impurity and Temperature Dependence of Saturated Drift Velo..:

Daga, O. P. ; Khokle, W. S. ; Ghule, H. M.
physica status solidi (b). 61 (1974) 1 - p. , 1974

Link: https://doi.org/10.1002/..