Danilewsky, A.
254  Ergebnisse:
Personensuche X
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4

Investigation of crystallographic and detection properties ..:

Cecilia, A ; Hamann, E ; Haas, C...
Journal of Instrumentation.  6 (2011)  10 - p. P10016-P10016 , 2011
 
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5

Dislocation generation related to micro-cracks in Si wafers..:

Danilewsky, A. ; Wittge, J. ; Hess, A....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  268 (2010)  3-4 - p. 399-402 , 2010
 
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7

Study of the influence of the rare-earth elements on the pr..:

Matuchova, M. ; Zdansky, K. ; Zavadil, J....
Journal of Crystal Growth.  311 (2009)  14 - p. 3557-3562 , 2009
 
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8

Phase equilibria, crystal growth and characterization of th..:

Muehlberg, M. ; Burianek, M. ; Joschko, B....
Journal of Crystal Growth.  310 (2008)  7-9 - p. 2288-2294 , 2008
 
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10

Dislocations in GaAs p-i-n diodes grown by hydride vapour p..:

Säynätjoki, A. ; Lankinen, A. ; Tuomi, T. O....
Journal of Materials Science: Materials in Electronics.  19 (2007)  2 - p. 149-154 , 2007
 
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11

Synchrotron X-ray topographic study of dislocations and sta..:

Lankinen, A. ; Tuomi, T. ; Riikonen, J....
Journal of Crystal Growth.  283 (2005)  3-4 - p. 320-327 , 2005
 
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12

Synchrotron X-ray topography study of defects in indium ant..:

Riikonen, J. ; Tuomi, T. ; Lankinen, A....
Journal of Materials Science: Materials in Electronics.  16 (2005)  7 - p. 449-453 , 2005
 
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13

Book Review: Tensor Properties of Crystal. By D. R. Lovett:

Danilewsky, A.
Crystal Research and Technology.  37 (2002)  1 - p. 142-142 , 2002
 
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14

An evaluation of liquid phase epitaxial InGaAs/InAs heteros..:

McNally, Patrick J ; Curley, J ; Krier, A...
Semiconductor Science and Technology.  13 (1998)  4 - p. 345-349 , 1998
 
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15

GaSb: surface tension and floating-zone growth:

Tegetmeier, A. ; Cröll, A. ; Danilewsky, A..
Journal of Crystal Growth.  166 (1996)  1-4 - p. 651-656 , 1996
 
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