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Dasgupta, Sansaptak
15  Ergebnisse:
Personensuche X
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1

High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN ..:

, In: 2019 Device Research Conference (DRC),
Then, Han Wui ; Dasgupta, Sansaptak ; Radosavljevic, Marko... - p. 39-40 , 2019
Link: https://doi.org/10.1109/..
 
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2

Estimation of Hot Electron Relaxation Time in GaN Using Hot..:

Dasgupta, Sansaptak ; Lu, Jing ; Raman, Nidhi...
Applied Physics Express.  6 (2013)  3 - p. 034002 , 2013
Link: https://doi.org/10.7567/..
 
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3

Growth and Characterization of N-Polar GaN Films on Si(111)..:

Dasgupta, Sansaptak ; Wu, Nidhi ; Speck, James S..
Japanese Journal of Applied Physics.  51 (2012)  11R - p. 115503 , 2012
Link: https://doi.org/10.1143/..
 
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4

Growth and Characterization of N-Polar GaN Films on Si(111)..:

Dasgupta, Sansaptak ; Wu, Nidhi ; Speck, James S..
Japanese Journal of Applied Physics.  51 (2012)  11R - p. 115503 , 2012
Link: https://doi.org/10.7567/..
 
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5

Effects of Threading Dislocation Density on the Gate Leakag..:

Kaun, Stephen W. ; Wong, Man Hoi ; Dasgupta, Sansaptak...
Applied Physics Express.  4 (2011)  2 - p. 024101 , 2011
Link: https://doi.org/10.1143/..
 
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6

Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor ..:

Singisetti, Uttam ; Wong, Man Hoi ; Dasgupta, Sansaptak..
Applied Physics Express.  4 (2011)  2 - p. 024103 , 2011
Link: https://doi.org/10.1143/..
 
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7

Growth, Structural, and Electrical Characterizations of N-P..:

Dasgupta, Sansaptak ; Choi, Soojeong ; Wu, Feng..
Applied Physics Express.  4 (2011)  4 - p. 045502 , 2011
Link: https://doi.org/10.1143/..
 
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8

Ultralow nonalloyed Ohmic contact resistance to self aligne..:

Dasgupta, Sansaptak ; Nidhi ; Brown, David F....
Applied Physics Letters.  96 (2010)  14 - p. , 2010
Link: https://doi.org/10.1063/..
 
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9

Growth of high quality N-polar AlN(0001¯) on Si(111) by pla..:

Dasgupta, Sansaptak ; Wu, F. ; Speck, J. S..
Applied Physics Letters.  94 (2009)  15 - p. , 2009
Link: https://doi.org/10.1063/..
 
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10

AlGaN Channel High Electron Mobility Transistors: Device Pe..:

Raman, Ajay ; Dasgupta, Sansaptak ; Rajan, Siddharth..
Japanese Journal of Applied Physics.  47 (2008)  5R - p. 3359 , 2008
Link: https://doi.org/10.1143/..
 
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11

Improved Performance of Plasma-Assisted Molecular Beam Epit..:

Chu, Rongming ; Poblenz, Christiane ; Wong, Man Hoi...
Applied Physics Express.  1 (2008)  - p. 061101 , 2008
Link: https://doi.org/10.1143/..
 
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12

N-polar GaN epitaxy and high electron mobility transistors:

Wong, Man Hoi ; Keller, Stacia ; Dasgupta, Nidhi, Sansaptak...
Semiconductor Science and Technology.  28 (2013)  7 - p. 074009 , 2013
Link: https://doi.org/10.1088/..
 
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13

Beta decay study of 126Sb and 126mSb:

Mukherjee, G. ; Nayak, Satya Samiran ; Datta, J....
Journal of Radioanalytical and Nuclear Chemistry.  333 (2023)  3 - p. 1531-1539 , 2023
Link: https://doi.org/10.1007/..
 
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14

True coincidence summing correction for a BEGe detector in ..:

Gupta, Ashish ; Shareef, M. ; Twisha, Munmun...
Applied Radiation and Isotopes.  200 (2023)  - p. 110966 , 2023
Link: https://doi.org/10.1016/..
 
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15

Calculation of true coincidence summing correction factor f..:

Gupta, Ashish ; Shareef, M ; Twisha, Munmun...
http://arxiv.org/abs/2302.02776.  , 2023
Link: http://arxiv.org/abs/230..
 
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