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Daudin, B.
318  Ergebnisse:
Personensuche X
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1

Physica status solidi 

Volume 122, Number 1: March 1  Physica status solidi ; Volume 122, Number 1, B
Abramishvili, M. G ; Altukhov, V. I ; An, Phuong... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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Eu3+ optical activation engineering in Al Ga1-N nanowires f..:

Cardoso, J. ; Jacopin, G. ; Faye, D.Nd....
Applied Materials Today.  22 (2021)  - p. 100893 , 2021
Link: https://doi.org/10.1016/..
 
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3

Incorporation of Europium into GaN Nanowires by Ion Implant..:

Faye, D. Nd. ; Biquard, X. ; Nogales, E....
The Journal of Physical Chemistry C.  123 (2019)  18 - p. 11874-11887 , 2019
Link: https://doi.org/10.1021/..
 
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Multiple optical centers in Eu-implanted AlN nanowires for ..:

Cardoso, J. ; Ben Sedrine, N. ; Alves, A....
Applied Physics Letters.  113 (2018)  20 - p. , 2018
Link: https://doi.org/10.1063/..
 
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5

Doping β-Ga2O3 with europium: influence of the implantation..:

Peres, M ; Lorenz, K ; Alves, E...
Journal of Physics D: Applied Physics.  50 (2017)  32 - p. 325101 , 2017
Link: https://doi.org/10.1088/..
 
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6

Reprint of: Optical properties of wurtzite GaN/AlN quantum ..:

Budagosky, J.A. ; Garro, N. ; Cros, A....
Materials Science in Semiconductor Processing.  55 (2016)  - p. 90-94 , 2016
Link: https://doi.org/10.1016/..
 
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7

Correction to "Spectroscopic Analysis of Eu3+ Implanted and..:

Rodrigues, J. ; Leitão, M. F. ; Carreira, J. F. C....
The Journal of Physical Chemistry C.  120 (2016)  12 - p. 6907-6908 , 2016
Link: https://doi.org/10.1021/..
 
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Optical properties of wurtzite GaN/AlN quantum dots grown o..:

Budagosky, J.A. ; Garro, N. ; Cros, A....
Materials Science in Semiconductor Processing.  49 (2016)  - p. 76-80 , 2016
Link: https://doi.org/10.1016/..
 
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9

Phonon–plasmon coupling in Si doped GaN nanowires:

Rozas-Jiménez, E. ; Cros, A. ; Murcia-Mascarós, S...
Materials Science in Semiconductor Processing.  55 (2016)  - p. 63-66 , 2016
Link: https://doi.org/10.1016/..
 
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10

Quantum Dot-Like Behavior of Compositional Fluctuations in ..:

Belloeil, M. ; Gayral, B. ; Daudin, B.
Nano Letters.  16 (2016)  2 - p. 960-966 , 2016
Link: https://doi.org/10.1021/..
 
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11

Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN L..:

Rodrigues, J. ; Leitão, M. F. ; Carreira, J. F. C....
The Journal of Physical Chemistry C.  119 (2015)  31 - p. 17954-17964 , 2015
Link: https://doi.org/10.1021/..
 
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12

Assessment of Polarity in GaN Self-Assembled Nanowires by E..:

Minj, A. ; Cros, A. ; Garro, N....
Nano Letters.  15 (2015)  10 - p. 6770-6776 , 2015
Link: https://doi.org/10.1021/..
 
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13

Anisotropic In distribution in InGaN core-shell nanowires:

Leclere, C. ; Katcho, N. A. ; Tourbot, G....
Journal of Applied Physics.  116 (2014)  1 - p. , 2014
Link: https://doi.org/10.1063/..
 
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14

A polarity-driven nanometric luminescence asymmetry in AlN/..:

Tizei, L. H. G. ; Meuret, S. ; March, K....
Applied Physics Letters.  105 (2014)  14 - p. , 2014
Link: https://doi.org/10.1063/..
 
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15

GaN:Pr3+ nanostructures for red solid state light emission:

Rodrigues, J. ; Ben Sedrine, N. ; Felizardo, M....
RSC Adv..  4 (2014)  108 - p. 62869-62877 , 2014
Link: https://doi.org/10.1039/..
 
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