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X
Daval, N
44  Ergebnisse:
Personensuche X
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1

Engineered SiC materials for power technologies:

, In: 2022 International Conference on IC Design and Technology (ICICDT),
Schwarzenbach, W. ; Rouchier, S. ; Berre, G.... - p. 55-56 , 2022
Link: https://doi.org/10.1109/..
 
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2

SmartSiC™ for Manufacturing of SiC Power Devices:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Daval, N. ; Drouin, A. ; Biard, H.... - p. 85-87 , 2022
Link: https://doi.org/10.1109/..
 
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3

Silicon-on-insulator (SOI) fin-on-oxide field effect transi..:

, In: Silicon-On-Insulator (SOI) Technology,
Cheng, B. ; Brown, A. ; Towie, E.... - p. 195-211 , 2014
Link: https://doi.org/10.1533/..
 
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4

Contributor contact details:

, In: Silicon-On-Insulator (SOI) Technology,
Kononchuk, O. ; Nguyen, B.-Y. ; Moriceau, H.... - p. xi-xiii , 2014
Link: https://doi.org/10.1016/..
 
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5

New opportunities for SiGe and Ge channel p-FETs:

Bedell, S.W. ; Daval, N. ; Khakifirooz, A....
Microelectronic Engineering.  88 (2011)  4 - p. 324-330 , 2011
Link: https://doi.org/10.1016/..
 
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6

Dual strained channel CMOS in FDSOI architecture: New insig..:

Le Royer, C. ; Cassé, M. ; Cooper, D....
Solid-State Electronics.  65-66 (2011)  - p. 9-15 , 2011
Link: https://doi.org/10.1016/..
 
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7

Monolithic integration of InP-based transistors on Si subst..:

Liu, W.K. ; Lubyshev, D. ; Fastenau, J.M....
Journal of Crystal Growth.  311 (2009)  7 - p. 1979-1983 , 2009
Link: https://doi.org/10.1016/..
 
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8

Modeling and direct extraction of band offset induced by st..:

Garros, X. ; Rochette, F. ; Andrieu, F....
Journal of Applied Physics.  105 (2009)  11 - p. , 2009
Link: https://doi.org/10.1063/..
 
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9

Engineering Substrates for 3D Integration of III-V and CMOS:

Herrick, Katherine J. ; Kazior, T. E. ; LaRoche, J. R....
ECS Transactions.  16 (2008)  8 - p. 227-234 , 2008
Link: https://doi.org/10.1149/..
 
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10

Monolithic III-V/Si Integration:

Fitzgerald, Eugene A. ; Bulsara, M. T. ; Bai, Y....
ECS Transactions.  16 (2008)  10 - p. 1015-1020 , 2008
Link: https://doi.org/10.1149/..
 
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11

Splitting kinetics of Si0.8Ge0.2 layers implanted with H or..:

Nguyen, Phuong ; Bourdelle, K. K. ; Aulnette, C....
Journal of Applied Physics.  104 (2008)  11 - p. , 2008
Link: https://doi.org/10.1063/..
 
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12

Engineering strained silicon on insulator wafers with the S..:

Ghyselen, B. ; Hartmann, J.-M. ; Ernst, T....
Solid-State Electronics.  48 (2004)  8 - p. 1285-1296 , 2004
Link: https://doi.org/10.1016/..
 
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13

Strain characterization of strained silicon on insulator wa..:

Paillard, V ; Ghyselen, B ; Aulnette, C...
Microelectronic Engineering.  72 (2004)  1-4 - p. 367-373 , 2004
Link: https://doi.org/10.1016/..
 
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14

New layer transfers obtained by the SmartCut process:

Moriceau, H. ; Fournel, F. ; Aspar, B....
Journal of Electronic Materials.  32 (2003)  8 - p. 829-835 , 2003
Link: https://doi.org/10.1007/..
 
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15

Age, courtship and senescence: sexual ornaments are larger ..:

Palau Daval, N. ; Gardette, V. ; Joly, P.
Journal of Zoology.  306 (2018)  3 - p. 156-162 , 2018
Link: https://doi.org/10.1111/..
 
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