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Degroote, S.
266  Ergebnisse:
Personensuche X
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1

A micro-electro-mechanical accelerometer based on gallium n..:

Morelle, C. ; Théron, D. ; Roch-Jeune, I....
Applied Physics Letters.  122 (2023)  3 - p. , 2023
Link: https://doi.org/10.1063/..
 
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2

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double hetero..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Abid, I. ; Kabouche, R. ; Medjdoub, F.... - p. 310-312 , 2020
Link: https://doi.org/10.1109/..
 
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3

Communication satisfaction and job satisfaction among criti..:

Vermeir, P. ; Blot, S. ; Degroote, S....
Intensive and Critical Care Nursing.  48 (2018)  - p. 21-27 , 2018
Link: https://doi.org/10.1016/..
 
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4

Communication in healthcare: a narrative review of the lite..:

Vermeir, P. ; Vandijck, D. ; Degroote, S....
International Journal of Clinical Practice.  69 (2015)  11 - p. 1257-1267 , 2015
Link: https://doi.org/10.1111/..
 
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5

Formation of V-grooves on the (Al,Ga)N surface as means of ..:

Cheng, Kai ; Leys, M. ; Degroote, S....
Journal of Crystal Growth.  353 (2012)  1 - p. 88-94 , 2012
Link: https://doi.org/10.1016/..
 
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6

AlN/GaN heterostructures grown by metal organic vapor phase..:

Cheng, Kai ; Degroote, S. ; Leys, M....
Journal of Crystal Growth.  315 (2011)  1 - p. 204-207 , 2011
Link: https://doi.org/10.1016/..
 
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7

Mg doping of GaN by molecular beam epitaxy:

Lieten, R R ; Motsnyi, V ; Zhang, L...
Journal of Physics D: Applied Physics.  44 (2011)  13 - p. 135406 , 2011
Link: https://doi.org/10.1088/..
 
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8

Interface of GaN grown on Ge(111) by plasma assisted molecu..:

Lieten, R.R. ; Richard, O. ; Degroote, S....
Journal of Crystal Growth.  314 (2011)  1 - p. 71-75 , 2011
Link: https://doi.org/10.1016/..
 
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9

Strain effects in GaN epilayers grown on different substrat..:

Zhang, L. ; Cheng, K. ; Degroote, S....
Journal of Applied Physics.  108 (2010)  7 - p. , 2010
Link: https://doi.org/10.1063/..
 
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10

Hydrogen and inert species in solid phase epitaxy:

Lieten, R. R. ; Degroote, S. ; Clemente, F...
Applied Physics Letters.  96 (2010)  5 - p. , 2010
Link: https://doi.org/10.1063/..
 
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11

Large‐area, catalyst‐free heteroepitaxy of InAs nanowires o..:

Cantoro, M. ; Wang, G. ; Lin, H. C....
physica status solidi (a).  208 (2010)  1 - p. 129-135 , 2010
Link: https://doi.org/10.1002/..
 
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12

Suppression of domain formation in GaN layers grown on Ge(1..:

Lieten, R.R. ; Degroote, S. ; Leys, M..
Journal of Crystal Growth.  311 (2009)  5 - p. 1306-1310 , 2009
Link: https://doi.org/10.1016/..
 
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13

Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere:

Lieten, R. R. ; Degroote, S. ; Leys, M...
Applied Physics Letters.  94 (2009)  11 - p. , 2009
Link: https://doi.org/10.1063/..
 
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14

Growth of InN on Ge(111) by molecular beam epitaxy using a ..:

Lieten, R.R. ; Degroote, S. ; Leys, M....
Journal of Crystal Growth.  310 (2008)  6 - p. 1132-1136 , 2008
Link: https://doi.org/10.1016/..
 
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15

An Initial Exploration of GaN Grown on a Ge-(111) Substrate:

, In: Springer Proceedings in Physics; Microscopy of Semiconducting Materials 2007,
Zhang, Y ; McAleese, C ; Xiu, H... - p. 61-64 , 2008
Link: https://doi.org/10.1007/..
 
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