E-LIB Suche - Ergebnisse für: Degroote, Stefan

1

AlGaN Channel High Electron Mobility Transistors with Regro..:

Abid, Idriss ; Mehta, Jash ; Cordier, Yvon...
Electronics. 10 (2021) 6 - p. 635 , 2021

Link: https://doi.org/10.3390/..

2

High Breakdown Voltage and Low Buffer Trapping in Superlatt..:

Tajalli, Alaleh ; Meneghini, Matteo ; Besendörfer, Sven...
Materials. 13 (2020) 19 - p. 4271 , 2020

Link: https://doi.org/10.3390/..

3

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buff..:

Tajalli, Alaleh ; Borga, Matteo ; Meneghini, Matteo...
Micromachines. 11 (2020) 1 - p. 101 , 2020

Link: https://doi.org/10.3390/..

4

Low On‐Resistance and Low Trapping Effects in 1200 V Superl..:

Kabouche, Riad ; Abid, Idriss ; Püsche, Roland...
physica status solidi (a). 217 (2019) 7 - p. , 2019

Link: https://doi.org/10.1002/..

5

Gallium nitride MEMS resonators: how residual stress impact..:

Morelle, Christophe ; Théron, Didier ; Derluyn, Joff...
Microsystem Technologies. 24 (2017) 1 - p. 371-377 , 2017

Link: https://doi.org/10.1007/..

6

1900 V, 1.6 mΩ cm2AlN/GaN-on-Si power devices realized by l..:

Herbecq, Nicolas ; Roch-Jeune, Isabelle ; Rolland, Nathalie...
Applied Physics Express. 7 (2014) 3 - p. 034103 , 2014

Link: https://doi.org/10.7567/..

7

Indium-Rich InGaN Films Grown on Ge Substrate by Plasma-Ass..:

Ma, Quan-Bao ; Lieten, Ruben ; Degroote, Stefan..
Journal of Electronic Materials. 44 (2014) 1 - p. 202-209 , 2014

Link: https://doi.org/10.1007/..

8

GaN-on-Si for Power Technology:

Visalli, Domenica ; Derluyn, Joff ; Sijmus, Bram..
ECS Transactions. 50 (2013) 3 - p. 173-176 , 2013

Link: https://doi.org/10.1149/..

9

Investigation of Light-Induced Deep-Level Defect Activation..:

Visalli, Domenica ; Hove, Marleen Van ; Leys, Maarten...
Applied Physics Express. 4 (2011) 9 - p. 094101 , 2011

Link: https://doi.org/10.1143/..

10

Solid phase epitaxy of amorphous Ge films deposited by PECV:

Ma, Quan-Bao ; Lieten, Ruben ; Leys, Maarten...
Journal of Crystal Growth. 331 (2011) 1 - p. 40-43 , 2011

Link: https://doi.org/10.1016/..

11

(Invited) Selective Epitaxial Growth of III-V Semiconductor..:

Nguyen, Ngoc Duy ; Wang, Gang ; Brammertz, Guy...
ECS Transactions. 33 (2010) 6 - p. 933-939 , 2010

Link: https://doi.org/10.1149/..

12

(Invited) Epitaxial Growth of III-Nitrides on Silicon Subst..:

Degroote, Stefan ; Leys, Maarten ; Cheng, Kai...
ECS Transactions. 33 (2010) 6 - p. 833-842 , 2010

Link: https://doi.org/10.1149/..

13

Excellent Stability of GaN-on-Si High Electron Mobility Tra..:

Marcon, Denis ; Hove, Marleen Van ; Visalli, Domenica...
Japanese Journal of Applied Physics. 49 (2010) 4S - p. 04DF07 , 2010

Link: https://doi.org/10.1143/..

14

Limitations of Field Plate Effect Due to the Silicon Substr..:

Visalli, Domenica ; Van Hove, Marleen ; Derluyn, Joff...
IEEE Transactions on Electron Devices. 57 (2010) 12 - p. 3333-3339 , 2010

Link: https://doi.org/10.1109/..

15

Experimental and simulation study of breakdown voltage enha..:

Visalli, Domenica ; Van Hove, Marleen ; Srivastava, Puneet...
Applied Physics Letters. 97 (2010) 11 - p. , 2010

Link: https://doi.org/10.1063/..