Divay, A.
411  Ergebnisse:
Personensuche X
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1

A Methodology to Address RF Aging of 40nm CMOS PA Cells Und..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Divay, A. ; Dehos, C. ; Charlet, I.... - p. 4B.2-1-4B.2-6 , 2024
 
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2

6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-s..:

, In: 2023 International Electron Devices Meeting (IEDM),
Morvan, E. ; Gobil, Y. ; Morisot, F.... - p. 1-4 , 2023
 
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3

A cost effective RF-SOI Drain Extended MOS transistor featu..:

, In: 2023 International Electron Devices Meeting (IEDM),
Garros, X. ; Divay, A. ; Lacord, J.... - p. 1-4 , 2023
 
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4

Integrated Test Circuit for Off-State Dynamic Drain Stress ..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Hai, J. ; Cacho, F. ; Federspiel, X.... - p. 1-6 , 2023
 
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5

Comprehensive Analysis of RF Hot-Carrier Reliability Sensit..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
Hai, J. ; Cacho, F. ; Divay, A.... - p. 4B.2-1-4B.2-6 , 2022
 
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6

Highly robust and reliable power amplifiers in 22FDX and 45..:

, In: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC),
Bossuet, A. ; Divay, A. ; Martineau, B.... - p. 332-335 , 2022
 
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7

CMOS FD-SOI Technologies Ruggedness for Millimeter Wave Pow..:

, In: 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS),
Martineau, B. ; Bossuet, A. ; Divay, A... - p. 1-4 , 2022
 
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8

65nm RFSOI Power Amplifier Transistor Ageing at mm W freque..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Divay, A. ; Forest, J. ; Knopik, V.... - p. 39.3.1-39.3.4 , 2021
 
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9

Design and Characterisation of VO2 Based Switches for Ultra..:

, In: 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP),
Sadiq, M. N. ; Martin, M-B. ; Divay, L.... - p. 172-174 , 2019
 
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10

A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transisto..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Garros, X. ; Cacho, F. ; Vincent, E.... - p. 25.5.1-25.5.4 , 2019
 
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11

Extraction of physical Schottky parameters using the Lamber..:

Latry, O. ; Divay, A. ; Fadil, D..
Journal of Semiconductors.  38 (2017)  1 - p. 014007 , 2017
 
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12

Ageing of GaN HEMT devices: which degradation indicators?:

Divay, A. ; Latry, O. ; Duperrier, C..
Journal of Semiconductors.  37 (2016)  1 - p. 014001 , 2016
 
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14

An athermal measurement technique for long time constants t..:

Divay, A. ; Masmoudi, M. ; Latry, O...
Microelectronics Reliability.  55 (2015)  9-10 - p. 1703-1707 , 2015
 
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15

Self-standing electrochemical double layer capacitors for o..:

Lecoeur, C. ; Daffos, B. ; Lin, R....
Materials for Renewable and Sustainable Energy.  2 (2013)  2 - p. , 2013
 
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