E-LIB Suche - Ergebnisse für: Divay, Alexis

1

A 3.2–3.6GHz SOI-LDMOS Dual-Input Doherty Power Amplifier:

, In: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S),

Boutayeb, Saad ; Serhan, Ayssar ; Reynier, Pascal... - p. 1-2 , 2019

Link: https://doi.org/10.1109/..

2

Advantages of Faceted P-Raised Source/Drain in Fully Deplet..:

Aydin, Ömür Işıl ; Holt, Judson Robert ; Le Royer, Cyrille...
ECS Transactions. 86 (2018) 7 - p. 199-206 , 2018

Link: https://doi.org/10.1149/..

3

Localizing and analyzing defects in AlGaN/GaN HEMT using ph..:

Moultif, Niemat ; Divay, Alexis ; Joubert, Eric.
Engineering Failure Analysis. 81 (2017) - p. 69-78 , 2017

Link: https://doi.org/10.1016/..

4

Integrated Test Circuit for Off-State Dynamic Drain Stress ..:

Hai, Joycelyn ; Cacho, Florian ; Federspiel, Xavier...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48203.2023.10117885. , 2023

Link: https://hal.science/hal-..

5

Integrated Test Circuit for Off-State Dynamic Drain Stress ..:

Hai, Joycelyn ; Cacho, Florian ; Federspiel, Xavier...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48203.2023.10117885. , 2023

Link: https://hal.science/hal-..

6

Integrated Test Circuit for Off-State Dynamic Drain Stress ..:

Hai, Joycelyn ; Cacho, Florian ; Federspiel, Xavier...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48203.2023.10117885. , 2023

Link: https://hal.science/hal-..

7

Highly robust and reliable power amplifiers in 22FDX and 45..:

Bossuet, Alice ; Divay, Alexis ; Martineau, Baudouin...
cea-03725781. , 2022

Link: https://hal-cea.archives..

8

A highly rugged 39 GHz 19.3 dBm power amplifier for 5G appl..:

Bossuet, Alice ; Martineau, Baudouin ; Dehos, Cedric...
info:eu-repo/semantics/altIdentifier/doi/10.23919/EuMIC50153.2022.9784044. , 2021

Link: https://hal-cea.archives..

9

Caractérisation de la diode d'un transistor HEMT en GaN sou..:

Divay, Alexis ; Latry, O ; Duperrier, Cédric.
hal-01230931. , 2015

Link: https://hal.science/hal-..

10

Study of the long term reliability of GaN HEMT transistors ..:

Divay, Alexis
tel-01280441. , 2015

Link: https://hal.archives-ouv..

11

Study of the long term reliability of GaN HEMT transistors ..:

Divay, Alexis
tel-01280441. , 2015

Link: https://hal.science/tel-..

12

An athermal measurement technique for long time constants t..:

Divay, Alexis ; Masmoudi, Mohamed, Lamine ; Latry, Olivier..
hal-01230925. , 2015

Link: https://hal.science/hal-..

13

Caractérisation de la diode d'un transistor HEMT en GaN sou..:

Divay, Alexis ; Latry, O ; Duperrier, Cédric.
hal-01230931. , 2015

Link: https://hal.science/hal-..

14

Caractérisation de la diode d'un transistor HEMT en GaN sou..:

Divay, Alexis ; Latry, O ; Duperrier, Cédric.
hal-01230931. , 2015

Link: https://hal.science/hal-..

15

Caractérisation de la diode d'un transistor HEMT en GaN sou..:

Divay, Alexis ; Latry, O ; Duperrier, Cédric.
hal-01230931. , 2015

Link: https://hal.science/hal-..