E-LIB Suche - Ergebnisse für: Djezzar, Boualem

1

Single Pulse Charge Pumping Technique Improvement for Inter..:

Messaoud, DhiaElhak ; Djezzar, Boualem ; Boubaaya, Mohamed...
IEEE Transactions on Device and Materials Reliability. 23 (2023) 4 - p. 521-529 , 2023

Link: https://doi.org/10.1109/..

2

Fast Methods for Studying the Effect of Electrical Stress o..:

Messaoud, Dhia Elhak ; Djezzar, Boualem ; Boubaaya, Mohamed...
Instruments and Experimental Techniques. 66 (2023) 6 - p. 1095-1105 , 2023

Link: https://doi.org/10.1134/..

3

An Overview of the NBTI Phenomenon in MOS Devices:

DhiaElhak Messaoud ; Djezzar, Boualem ; Zitouni, Abdelkader
Russian Microelectronics. 52 (2023) 5 - p. 439-468 , 2023

Link: https://doi.org/10.1134/..

4

Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) ..:

Messaoud, Dhia Elhak ; Djezzar, Boualem ; Boubaaya, Mohamed...
Instruments and Experimental Techniques. 66 (2023) 6 - p. 1085-1094 , 2023

Link: https://doi.org/10.1134/..

5

Study and Analysis of NBTI Effect on pMOSFET Using Fast Mea..:

Abdelmadjid Benabdelmoumene ; Djezzar, Boualem ; Messaoud, Dhiaelhak...
Russian Microelectronics. 52 (2023) 5 - p. 429-438 , 2023

Link: https://doi.org/10.1134/..

6

Odyssey of the charge pumping technique and its application..:

Djezzar, Boualem
Journal of Applied Physics. 134 (2023) 22 - p. , 2023

Link: https://doi.org/10.1063/..

7

Detailed total ionizing dose effects on LDMOS transistors:

Houadef, Ali ; Djezzar, Boualem
Microelectronics Reliability. 136 (2022) - p. 114636 , 2022

Link: https://doi.org/10.1016/..

8

NBTI Fast Electrical Characterization in pMOSFET Devices:

MESSAOUD, DhiaElhak ; Djezzar, Boualem ; Benabdelmoumene, Abdelmadjid...
Algerian Journal of Signals and Systems. 6 (2021) 1 - p. 24-31 , 2021

Link: https://doi.org/10.51485..

9

Process and performance optimization of Triple‐RESURFLDMOSw..:

Houadef, Ali ; Djezzar, Boualem
International Journal of RF and Microwave Computer-Aided Engineering. 31 (2021) 10 - p. , 2021

Link: https://doi.org/10.1002/..

10

HCI Degradation of LOCOS-based LDMOS Transistor fabricated ..:

, In: 2020 International Conference on Electrical Engineering (ICEE),

Houadef, Ali ; Djezzar, Boualem - p. 1-6 , 2020

Link: https://doi.org/10.1109/..

11

Recovery investigation of NBTI-induced traps in n-MOSFET de..:

Djezzar, Boualem ; Benabdelmoumene, Abdelmadjid ; Zatout, Boumediene...
Microelectronics Reliability. 110 (2020) - p. 113703 , 2020

Link: https://doi.org/10.1016/..

12

Sizing of the CMOS 6T‐SRAM cell for NBTI ageing mitigation:

Chenouf, Amel ; Djezzar, Boualem ; Bentarzi, Hamid.
IET Circuits, Devices & Systems. 14 (2020) 4 - p. 555-561 , 2020

Link: https://doi.org/10.1049/..

13

NBTI stress on power VDMOS transistors under low magnetic f..:

, In: 2015 IEEE International Integrated Reliability Workshop (IIRW),

Tahanout, Cherifa ; Tahi, Hakim ; Boubaaya, Mohamed... - p. 147-150 , 2015

Link: https://doi.org/10.1109/..

14

On the permanent component profiling of the negative bias t..:

Djezzar, Boualem ; Tahi, Hakim ; Benabdelmoumene, Abdelmadjid...
Solid-State Electronics. 106 (2015) - p. 54-62 , 2015

Link: https://doi.org/10.1016/..

15

Investigation of interface, shallow and deep oxide traps un..:

Tahi, Hakim ; Djezzar, Boualem ; Benabdelmoumene, Abdelmadjid..
Microelectronics Reliability. 54 (2014) 5 - p. 882-888 , 2014

Link: https://doi.org/10.1016/..