E-LIB Suche - Ergebnisse für: Dobrich, Anja

1

Atomic surface control of Ge(100) in MOCVD reactors coated ..:

Paszuk, Agnieszka ; Supplie, Oliver ; Brückner, Sebastian...
Applied Surface Science. 565 (2021) - p. 150513 , 2021

2

In situ study of AlxGa1-xP nucleation on As-modified Si(100..:

, In: Joint Meeting of the DPG and EPS Condensed Matter Divisions together with the Statistical and Nonlinear Physics Division of the EPS and the Working Groups: Equal Opportunities, Industry and Business, Young DPG, Philosophy of Physics, (all DPG) EPS Young Minds, EPS History of Physics Group / Organiser: Deutsche Physikalische Gesellschaft e.V., Bad Honnef ; local organiser: Prof. Dr. Dr. h. c. Eckehard Schöll (Institut für Theoretische Physik, Technische Universität Berlin)

Nandy, Manali ; Dobrich, Anja ; Kleinschmidt, Peter.... (2018)

Exemplar: Zentrale:Magazinturm-E02 15z phy 001 ja/593-53,3

3

Metalorganic vapor phase epitaxy of III–V-on-silicon: Exper..:

Supplie, Oliver ; Romanyuk, Oleksandr ; Koppka, Christian...
Progress in Crystal Growth and Characterization of Materials. 64 (2018) 4 - p. 103-132 , 2018

Link: https://doi.org/10.1016/..

4

Double-layer stepped Si(1 0 0) surfaces prepared in As-rich..:

Paszuk, Agnieszka ; Supplie, Oliver ; Nandy, Manali...
Applied Surface Science. 462 (2018) - p. 1002-1007 , 2018

Link: https://doi.org/10.1016/..

5

Control Over Dimer Orientations on Vicinal Si(100) Surfaces..:

Brückner, Sebastian ; Supplie, Oliver ; Dobrich, Anja..
physica status solidi (b). 255 (2018) 4 - p. , 2018

Link: https://doi.org/10.1002/..

6

Control Over Dimer Orientations on Vicinal Si(100) Surfaces..:

Brückner, Sebastian ; Supplie, Oliver ; Dobrich, Anja..
physica status solidi (b). 255 (2017) 4 - p. , 2017

Link: https://doi.org/10.1002/..

7

In situ control over the sublattice orientation of GaP/Si(1..:

, In: 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC),

Paszuk, Agnieszka ; Supplie, Oliver ; Bruckner, Sebastian... - p. 2538-2542 , 2017

Link: https://doi.org/10.1109/..

8

In situ preparation of Si p-n junctions and subsequent surf..:

Paszuk, Agnieszka ; Dobrich, Anja ; Koppka, Christian...
Journal of Crystal Growth. 464 (2017) - p. 14-19 , 2017

Link: https://doi.org/10.1016/..

9

Silicon p-n junctions prepared by group-V in-diffusion in C..:

, In: 80th Annual Meeting of the DPG and DPG-Frühjahrstagung (Spring Meeting) of the Condensed Matter Section (SKM) / Deutsche Physikalische Gesellschaft e.V.

Paszuk, Agnieszka ; Duda, Marek ; Dobrich, Anja ; Kleinschmidt, Peter... (2016)

Exemplar: Zentrale:Magazinturm-E02 15z phy 001 ja/593-51,3

10

Interface analysis on MOVPE grown InP–GaInAs–InP double het..:

Dobrich, Anja ; Schwarzburg, Klaus ; Hannappel, Thomas
Solar Energy Materials and Solar Cells. 148 (2016) - p. 25-29 , 2016

Link: https://doi.org/10.1016/..

11

Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs conce..:

Dimroth, Frank ; Grave, Matthias ; Beutel, Paul...
Progress in Photovoltaics: Research and Applications. 22 (2014) 3 - p. 277-282 , 2014

Link: https://doi.org/10.1002/..

12

Ge(100) surfaces prepared in vapor phase epitaxy process am..:

Brückner, Sebastian ; Barrigón, Enrique ; Supplie, Oliver...
physica status solidi (RRL) – Rapid Research Letters. 6 (2012) 4 - p. 178-180 , 2012

Link: https://doi.org/10.1002/..

13

Anomalous double-layer step formation on Si(100) in hydroge..:

Brückner, Sebastian ; Döscher, Henning ; Kleinschmidt, Peter...
Physical Review B. 86 (2012) 19 - p. , 2012

Link: https://doi.org/10.1103/..

14

Surface preparation of Si(100) by thermal oxide removal in ..:

Döscher, Henning ; Brückner, Sebastian ; Dobrich, Anja...
Journal of Crystal Growth. 315 (2011) 1 - p. 10-15 , 2011

Link: https://doi.org/10.1016/..

15

Si(100) surfaces in a hydrogen-based process ambient:

Döscher, Henning ; Dobrich, Anja ; Brückner, Sebastian..
Applied Physics Letters. 97 (2010) 15 - p. 151905 , 2010

Link: https://doi.org/10.1063/..