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Domeij, Martin
62  Ergebnisse:
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1

Body Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar Operat..:

Pham, Thanh Toan ; Franchi, Jimmy ; Domeij, Martin
Materials Science Forum.  1091 (2023)  - p. 37-41 , 2023
Link: https://doi.org/10.4028/..
 
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2

Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs..:

Kochoska, Sara ; Domeij, Martin ; Pham, Thanh Toan...
Materials Science Forum.  1091 (2023)  - p. 43-47 , 2023
Link: https://doi.org/10.4028/..
 
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3

1.2 kV SiC MOSFET Body Diode Turn-Off in Fast Switching: Ch..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Pham, Thanh-Toan ; Franchi, Jimmy ; Lee, Kwangwon. - p. 334-337 , 2023
Link: https://doi.org/10.1109/..
 
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4

Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs..:

Kochoska, Sara ; Domeij, Martin ; Sunkari, Swapna...
Materials Science Forum.  1062 (2022)  - p. 554-559 , 2022
Link: https://doi.org/10.4028/..
 
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5

Gate Oxide Reliability and VTH Stability of Planar SiC MOS ..:

Domeij, Martin ; Franchi, Jimmy ; Maslougkas, Sotirios...
Materials Science Forum.  1062 (2022)  - p. 498-503 , 2022
Link: https://doi.org/10.4028/..
 
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6

SiC Diode with Vertical Superjunction Realized Using Channe..:

Maloušek, Roman ; Chochol, Jan ; Das, Hrishikesh...
Materials Science Forum.  1062 (2022)  - p. 549-553 , 2022
Link: https://doi.org/10.4028/..
 
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7

Effect of Phosphorus Doped Poly Annealing on Threshold Volt..:

Lee, Kwangwon ; Seo, Young Ho ; Lee, Taeseop...
Materials Science Forum.  1004 (2020)  - p. 554-558 , 2020
Link: https://doi.org/10.4028/..
 
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8

1200 V SiC MOSFETs with Stable VTH under High Temperature G..:

Franchi, Jimmy ; Domeij, Martin ; Lee, Kwangwon
Materials Science Forum.  963 (2019)  - p. 753-756 , 2019
Link: https://doi.org/10.4028/..
 
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9

TCAD Modeling of a 1200 V SiC MOSFET:

Lee, Kwangwon ; Buono, Benedetto ; Domeij, Martin.
Materials Science Forum.  924 (2018)  - p. 689-692 , 2018
Link: https://doi.org/10.4028/..
 
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10

Detection of Crystal Defects in High Doped Epitaxial Layers..:

Das, Hrishikesh ; Sunkari, Swapna ; Naas, Hans...
Materials Science Forum.  897 (2017)  - p. 222-225 , 2017
Link: https://doi.org/10.4028/..
 
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11

Analysis of Interface Trap Density and Channel Mobility in ..:

Domeij, Martin ; Franchi, Jimmy ; Gumaelius, Krister..
Materials Science Forum.  897 (2017)  - p. 115-118 , 2017
Link: https://doi.org/10.4028/..
 
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12

Detection of crystal defects in high doped epitaxial layers..:

, In: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM),
Das, Hrishikesh ; Sunkari, Swapna ; Naas, Hans... - p. 1-1 , 2016
Link: https://doi.org/10.4028/..
 
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13

Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs an..:

Domeij, Martin ; Buono, Benedetto ; Gumaelius, Krister.
Materials Science Forum.  858 (2016)  - p. 611-614 , 2016
Link: https://doi.org/10.4028/..
 
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14

(Invited) Enabling SiC Yield and Reliability through Epitax..:

Das, Hrishikesh ; Sunkari, Swapna ; Domeij, Martin...
ECS Transactions.  69 (2015)  11 - p. 29-32 , 2015
Link: https://doi.org/10.1149/..
 
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15

Stability of Current Gain in SiC BJTs:

Buono, Benedetto ; Allerstam, Fredrik ; Domeij, Martin...
Materials Science Forum.  778-780 (2014)  - p. 1017-1020 , 2014
Link: https://doi.org/10.4028/..
 
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