Duan, Congyan
24  Ergebnisse:
Personensuche X
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8

Monolithically Stacked Two Layers of a-IGZO-Based Transisto..:

Lu, Wendong ; Lu, Congyan ; Yang, Guanhua...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1697-1701 , 2023
 
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9

An Integration Tool of Safety and Security Requirements for..:

, In: 2023 International Conference on Artificial Intelligence of Things and Systems (AIoTSys),
He, Pengcheng ; Duan, Haopeng ; Luo, Jinyu... - p. 118-124 , 2023
 
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10

First Demonstration of Stacked 2T0C-DRAM Bit-Cell Construct..:

, In: 2023 International Electron Devices Meeting (IEDM),
Chen, Chuanke ; Xiang, Jinjuan ; Duan, Xinlv... - p. 1-4 , 2023
 
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11

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Le..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Chen, Kaifei ; Niu, Jiebin ; Yang, Guanhua... - p. 298-299 , 2022
 
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13

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD w..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Huang, Kailiang ; Duan, Xinlv ; Feng, Junxiao... - p. 296-297 , 2022
 
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14

27‐3: Invited Paper: High‐Performance Sub‐50nm Channel Leng..:

Duan, Xinlv ; Huang, Kailiang ; Feng, Junxiao...
SID Symposium Digest of Technical Papers.  53 (2022)  1 - p. 318-321 , 2022
 
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15

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for ..:

Duan, Xinlv ; Huang, Kailiang ; Feng, Junxiao...
IEEE Transactions on Electron Devices.  69 (2022)  4 - p. 2196-2202 , 2022
 
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