E. Dupuy
1507  Ergebnisse:
Personensuche X
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1

Exploration of the relationships between the ventilatory, c..:

Magnan, P O ; Besnier, F ; Dupuy, E...
European Journal of Preventive Cardiology.  31 (2024)  Supplement_1 - p. , 2024
 
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2

Physical functioning predicts cognition in systolic heart f..:

Besnier, F ; Gagnon, C ; Sellier, F...
European Journal of Preventive Cardiology.  31 (2024)  Supplement_1 - p. , 2024
 
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3

Nanosheet-based Complementary Field-Effect Transistors (CFE..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Mertens, H. ; Hosseini, M. ; Chiarella, T.... - p. 1-2 , 2023
 
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4

THE RECARDIO TRIAL PROTOCOL: COMPARING THE EFFECTS OF COGNI..:

Gagnon, C. ; Besnier, F. ; Vincent, T....
Canadian Journal of Cardiology.  39 (2023)  10 - p. S73-S74 , 2023
 
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5

EFFECT OF A COMBINED AEROBIC AND RESISTANCE TRAINING ON SIT..:

Glasson, P. ; Magnan, P. ; Besnier, F....
Canadian Journal of Cardiology.  39 (2023)  10 - p. S88-S89 , 2023
 
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6

EFFECT OF A COMBINED AEROBIC AND RESISTANCE TRAINING ON SIT..:

Glasson, P. ; Magnan, P. ; Besnier, F....
Canadian Journal of Diabetes.  47 (2023)  7 - p. S64 , 2023
 
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7

THE RECARDIO TRIAL PROTOCOL: COMPARING THE EFFECTS OF COGNI..:

Gagnon, C. ; Besnier, F. ; Vincent, T....
Canadian Journal of Diabetes.  47 (2023)  7 - p. S49-S50 , 2023
 
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8

Forksheet FETs with Bottom Dielectric Isolation, Self-Align..:

, In: 2022 International Electron Devices Meeting (IEDM),
Mertens, H. ; Ritzenthaler, R. ; Oniki, Y.... - p. 23.1.1-23.1.4 , 2022
 
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9

Scaled FinFETs Connected by Using Both Wafer Sides for Rout..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Veloso, A. ; Jourdain, A. ; Radisic, D.... - p. 284-285 , 2022
 
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10

High Performance Thermally Resistant FinFETs DRAM Periphera..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Ritzenthaler, R. ; Capogreco, E. ; Dupuy, E.... - p. 306-307 , 2022
 
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11

FinFETs with Thermally Stable RMG Gate Stack for Future DRA..:

, In: 2022 International Electron Devices Meeting (IEDM),
Capogreco, E. ; Arimura, H. ; Ritzenthaler, R.... - p. 26.2.1-26.2.4 , 2022
 
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12

Buried Power Rail Integration with Si FinFETs for CMOS Scal..:

, In: 2020 IEEE Symposium on VLSI Technology,
Gupta, A. ; Mertens, H. ; Tao, Z.... - p. 1-2 , 2020
 
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13

Scaled transistors with 2D materials from the 300mm fab:

, In: 2020 IEEE Silicon Nanoelectronics Workshop (SNW),
Asselberghs, I. ; Schram, T. ; Smets, Q.... - p. 67-68 , 2020
 
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14

Impact of Fin Height on Bias Temperature Instability of Mem..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
 
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15

BioFET Technology: Aggressively Scaled pMOS FinFET as Biose..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Martens, K. ; Vos, R. ; Stakenborg, T.... - p. 18.6.1-18.6.4 , 2019
 
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