E-LIB Suche - Ergebnisse für: Ebrish, Mona

1

Using machine learning with optical profilometry for GaN wa..:

Gallagher, James C. ; Mastro, Michael A. ; Ebrish, Mona A....
Scientific Reports. 13 (2023) 1 - p. , 2023

Link: https://doi.org/10.1038/..

2

Study of anode doping and avalanche in foundry compatible 1..:

Ebrish, Mona A. ; Porter, Matthew ; Jacobs, Alan...
Applied Physics Express. 16 (2023) 11 - p. 116501 , 2023

Link: https://doi.org/10.35848..

3

Optimizing performance and yield of vertical GaN diodes usi..:

Gallagher, James C. ; Ebrish, Mona A. ; Porter, Matthew A....
Scientific Reports. 12 (2022) 1 - p. , 2022

Link: https://doi.org/10.1038/..

4

Impact of Anode Thickness on Breakdown Mechanisms in Vertic..:

Ebrish, Mona ; Porter, Matthew ; Jacobs, Alan...
Crystals. 12 (2022) 5 - p. 623 , 2022

Link: https://doi.org/10.3390/..

5

A Simple Edge Termination Design for Vertical GaN P-N Diode:

Pandey, Prakash ; Nelson, Tolen M. ; Collings, William M....
IEEE Transactions on Electron Devices. 69 (2022) 9 - p. 5096-5103 , 2022

Link: https://doi.org/10.1109/..

6

Characterization and Modeling of a 1.3 kV Vertical GaN Diod:

, In: 2022 IEEE Applied Power Electronics Conference and Exposition (APEC),

Pandey, Prakash ; Collings, William ; Mahmud, Sadab... - p. 928-935 , 2022

Link: https://doi.org/10.1109/..

7

Process Optimization for Selective Area Doping of GaN by Io..:

Ebrish, Mona A. ; Anderson, Travis J. ; Jacobs, Alan G....
Journal of Electronic Materials. 50 (2021) 8 - p. 4642-4649 , 2021

Link: https://doi.org/10.1007/..

8

Effect of GaN Substrate Properties on Vertical GaN PiN Diod..:

Gallagher, James C. ; Anderson, Travis J. ; Koehler, Andrew D....
Journal of Electronic Materials. 50 (2021) 6 - p. 3013-3021 , 2021

Link: https://doi.org/10.1007/..

9

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs..:

Tadjer, Marko J ; Alema, Fikadu ; Osinsky, Andrei...
Journal of Physics D: Applied Physics. 54 (2020) 3 - p. 034005 , 2020

Link: https://doi.org/10.1088/..

10

Recovery from plasma etching-induced nitrogen vacancies in ..:

Foster, Geoffrey M. ; Koehler, Andrew ; Ebrish, Mona...
Applied Physics Letters. 117 (2020) 8 - p. , 2020

Link: https://doi.org/10.1063/..

11

(Invited) GaN Homoepitaxial Growth and Substrate-Dependent ..:

Hite, Jennifer K. ; Mastro, Michael A ; Anderson, Travis J....
ECS Transactions. 98 (2020) 6 - p. 63-67 , 2020

Link: https://doi.org/10.1149/..

12

Capacitive Sensing of Intercalated H2O Molecules Using Grap..:

Olson, Eric J. ; Ma, Rui ; Sun, Tao...
ACS Applied Materials & Interfaces. 7 (2015) 46 - p. 25804-25812 , 2015

Link: https://doi.org/10.1021/..

13

Effect of Noncovalent Basal Plane Functionalization on the ..:

Ebrish, Mona A. ; Olson, Eric J. ; Koester, Steven J.
ACS Applied Materials & Interfaces. 6 (2014) 13 - p. 10296-10303 , 2014

Link: https://doi.org/10.1021/..

14

SnSe2 field-effect transistors with high drive current:

Su, Yang ; Ebrish, Mona A. ; Olson, Eric J..
Applied Physics Letters. 103 (2013) 26 - p. , 2013

Link: https://doi.org/10.1063/..

15

Using machine learning with optical profilometry for GaN wa..:

Gallagher, James C ; Mastro, Michael A ; Ebrish, Mona A...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9971037/. , 2023

Link: http://www.ncbi.nlm.nih...