E-LIB Suche - Ergebnisse für: Ehwald, K.-E

1

Sensing glucose concentrations at GHz frequencies with a fu..:

Birkholz, M. ; Ehwald, K.-E. ; Basmer, T....
Journal of Applied Physics. 113 (2013) 24 - p. , 2013

Link: https://doi.org/10.1063/..

2

Fabrication of MEMS actuators from the BEOL of a 0.25 μm Bi..:

Kulse, P. ; Birkholz, M. ; Ehwald, K.-E....
Microelectronic Engineering. 97 (2012) - p. 276-279 , 2012

Link: https://doi.org/10.1016/..

3

Ultrathin TiN Membranes as a Technology Platform for CMOS-I..:

Birkholz, M. ; Ehwald, K.-E. ; Kulse, P....
Advanced Functional Materials. 21 (2011) 9 - p. 1652-1656 , 2011

Link: https://doi.org/10.1002/..

4

Corrosion-resistant metal layers from a CMOS process for bi..:

Birkholz, M. ; Ehwald, K.-E. ; Wolansky, D....
Surface and Coatings Technology. 204 (2010) 12-13 - p. 2055-2059 , 2010

Link: https://doi.org/10.1016/..

5

Cost-effective integration of an FN-programmed embedded fla..:

Fox, A. ; Ehwald, K.E. ; Schley, P....
Microelectronics Journal. 37 (2006) 11 - p. 1194-1199 , 2006

Link: https://doi.org/10.1016/..

6

Circuit applications of high-performance SiGe:C HBTs integr..:

Winkler, W ; Borngräber, J ; Heinemann, B...
Applied Surface Science. 224 (2004) 1-4 - p. 297-305 , 2004

Link: https://doi.org/10.1016/..

7

Cost-effective high-performance high-voltage SiGe:C HBTs wi..:

, In: International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224),

Heinemann, B. ; Kruger, D. ; Kurps, R.... - p. 15.6.1-15.6.4 , 2001

Link: https://doi.org/10.1109/..

8

Can Si(113) wafers be an alternative to Si(001)?:

Müssig, H.-J. ; Dabrowski, J. ; Ehwald, K.-E....
Microelectronic Engineering. 56 (2001) 1-2 - p. 195-203 , 2001

Link: https://doi.org/10.1016/..

9

Comparison of SiGe and SiGe:C heterojunction bipolar transi..:

Knoll, D ; Heinemann, B ; Ehwald, K.-E...
Thin Solid Films. 369 (2000) 1-2 - p. 342-346 , 2000

Link: https://doi.org/10.1016/..

10

Influence of the oxygen content in SiGe on the parameters o..:

Knoll, D. ; Heinemann, B. ; Bolze, D....
Journal of Electronic Materials. 27 (1998) 9 - p. 1022-1026 , 1998

Link: https://doi.org/10.1007/..

11

Base currents of Si/SiGe/Si HBT in dependence on the proces..:

Knoll, D. ; Fischer, G. ; Ehwald, K.E....
Applied Surface Science. 102 (1996) - p. 247-251 , 1996

Link: https://doi.org/10.1016/..

12

A BCCD-based dosimeter for mixed radiation fields:

Pierschel, M. ; Ehwald, K.-E. ; Heinemann, B....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 326 (1993) 1-2 - p. 304-309 , 1993

Link: https://doi.org/10.1016/..

13

Gettering and defect engineering for a low noise CCD compat..:

Ritter, G. ; Ehwald, K.-E. ; Knoll, D.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 326 (1993) 1-2 - p. 3-9 , 1993

Link: https://doi.org/10.1016/..

14

Impulse measurement of doping profiles in MOS structures us..:

Beister, G. ; Schmidt, V. ; Hottewitzsch, P..
Physica Status Solidi (a). 28 (1975) 1 - p. K53-K56 , 1975

Link: https://doi.org/10.1002/..

15

Albrecht-Thaer-Archiv

Arbeiten aus den Gebieten Bodenkunde, Pflanzenernährung, A... Albrecht-Thaer-Archiv ; Band 7, Heft 10

Ansorge, H. ; Becker, H. G. ; Ehwald, E.... - Reprint 2022 . , [2022]

Link: https://doi.org/10.1515/..