Eickhoff, M.
~ 1000  Ergebnisse:
Personensuche X
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1

Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam..:

McCandless, J. P. ; Rowe, D. ; Pieczulewski, N....
Japanese Journal of Applied Physics.  62 (2023)  SF - p. SF1013 , 2023
 
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2

Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 ..:

Karg, A. ; Kracht, M. ; Vogt, P....
Journal of Applied Physics.  132 (2022)  19 - p. , 2022
 
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4

Passivation layers for nanostructured photoanodes: ultra-th..:

Neuderth, P. ; Hille, P. ; Schörmann, J....
Journal of Materials Chemistry A.  6 (2018)  2 - p. 565-573 , 2018
 
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7

InGaN/GaN nanowires as a new platform for photoelectrochemi..:

Riedel, M. ; Hölzel, S. ; Hille, P....
Biosensors and Bioelectronics.  94 (2017)  - p. 298-304 , 2017
 
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8

Influence of the cluster constituents' reactivity on the de..:

Portz, A. ; Baur, M. ; Gebhardt, C. R....
The Journal of Chemical Physics.  146 (2017)  13 - p. , 2017
 
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10

Interfacial properties of self-assembled GaN nanowires on p..:

Koukoula, T. ; Kioseoglou, J. ; Kehagias, Th....
Materials Science in Semiconductor Processing.  55 (2016)  - p. 46-50 , 2016
 
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13

Luminescent properties of ZnO and ZnMgO epitaxial layers un..:

Kaminska, A. ; Duzynska, A. ; Nowakowska, M....
Journal of Alloys and Compounds.  672 (2016)  - p. 125-130 , 2016
 
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14

Ge doping of GaN beyond the Mott transition:

Ajay, A ; Schörmann, J ; Jiménez-Rodriguez, M...
Journal of Physics D: Applied Physics.  49 (2016)  44 - p. 445301 , 2016
 
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