E-LIB Suche - Ergebnisse für: Emtsev Jr., V.V.

1

Electrically active defects in erbium-implanted silicon: Ef..:

Emtsev, V.V. ; Emtsev Jr., V.V. ; Kozlovskii, V.V....
Materials Science and Engineering: B. 159-160 (2009) - p. 157-159 , 2009

Link: https://doi.org/10.1016/..

2

Formation rate of vacancy–oxygen complexes in heat-treated ..:

Emtsev, V. V. ; Emtsev Jr, V. V. ; Oganesyan, G. A.
Journal of Materials Science: Materials in Electronics. 18 (2007) 7 - p. 701-704 , 2007

Link: https://doi.org/10.1007/..

3

High-resolution magnetic-resonance spectroscopy of thermal ..:

Emtsev Jr., V.V. ; Ammerlaan, C.A.J. ; Ezhevskii, A.A..
Physica B: Condensed Matter. 376-377 (2006) - p. 45-49 , 2006

Link: https://doi.org/10.1016/..

4

Photoluminescence characterization of thermal defects in Cz..:

Emtsev, V.V. ; Mudryi, A.V. ; Emtsev Jr., V.V...
Physica B: Condensed Matter. 340-342 (2003) - p. 1018-1021 , 2003

Link: https://doi.org/10.1016/..

5

Stress-induced changes of thermal donor formation in heat-t..:

Emtsev, V.V. ; Andreev, B.A. ; Davydov, V.Yu....
Physica B: Condensed Matter. 340-342 (2003) - p. 769-772 , 2003

Link: https://doi.org/10.1016/..

6

Oxygen agglomeration and formation of oxygen‐related therma..:

Emtsev Jr., V. V. ; Ammerlaan, C. A. J. ; Emtsev, V. V....
Crystal Research and Technology. 38 (2003) 3-5 - p. 394-398 , 2003

Link: https://doi.org/10.1002/..

7

Double thermal donors in Czochralski‐grown silicon heat‐tre..:

Emtsev Jr., V. V. ; Ammerlaan, C. A. J. ; Emtsev, V. V....
physica status solidi (b). 235 (2002) 1 - p. 75-78 , 2002

Link: https://doi.org/10.1002/..

8

Effects of oxygen coimplantation on the formation of donor ..:

Emtsev Jr, V.V. ; Poloskin, D.S. ; Shek, E.I...
Materials Science and Engineering: B. 81 (2001) 1-3 - p. 74-76 , 2001

Link: https://doi.org/10.1016/..

9

Shallow donors in silicon coimplanted with rare-earth ions ..:

Emtsev Jr., V.V. ; Ammerlaan, C.A.J. ; Andreev, B.A....
Physica B: Condensed Matter. 308-310 (2001) - p. 350-353 , 2001

Link: https://doi.org/10.1016/..

10

Oxygen and Erbium related donor centers in Czochralski grow..:

Emtsev, V. V. ; Emtsev Jr., V. V. ; Poloskin, D. S....
Semiconductors. 33 (1999) 10 - p. 1084-1087 , 1999

Link: https://doi.org/10.1134/..

11

Impurity effects in silicon implanted with rare-earth ions:

Emtsev, V.V ; Emtsev Jr., V.V ; Poloskin, D.S...
Physica B: Condensed Matter. 273-274 (1999) - p. 346-349 , 1999

Link: https://doi.org/10.1016/..

12

Impurity centers in silicon doped with rare-earth impuritie..:

Emtsev, V. V. ; Emtsev Jr., V. V. ; Poloskin, D. S....
Semiconductors. 33 (1999) 6 - p. 603-605 , 1999

Link: https://doi.org/10.1134/..

13

A comparative study of donor formation in dysprosium, holmi..:

Emtsev, V.V ; Emtsev Jr, V.V ; Poloskin, D.S..
Journal of Luminescence. 80 (1998) 1-4 - p. 391-394 , 1998

Link: https://doi.org/10.1016/..

14

Physica status solidi

Volume 10, Number 1: March 16 Physica status solidi ; Volume 10, Number 1, A

Andreev, V. M ; Antonov, A. V ; Arashi, H... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

15

Relaxation of mechanical stresses in bending of silicon waf..:

Emtsev, V.V. ; Toporov, V.V. ; Oganesyan, G.A...
Physica B: Condensed Matter. 684 (2024) - p. 415949 , 2024

Link: https://doi.org/10.1016/..