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X
Esseni, David
142  Ergebnisse:
Personensuche X
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1

Analysis and Compensation of the Series Resistance Effects ..:

, In: 2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS),
Massarotto, Marco ; Driussi, Francesco ; Bucovaz, Mattia... - p. 1-5 , 2024
Link: https://doi.org/10.1109/..
 
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2

Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by ..:

Lizzit, Daniel ; Pala, Marco ; Driussi, Francesco.
IEEE Transactions on Electron Devices.  71 (2024)  5 - p. 3301-3306 , 2024
Link: https://doi.org/10.1109/..
 
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3

Ohmic Behavior in Metal Contacts to n/p-Type Transition-Met..:

Lizzit, Daniel ; Khakbaz, Pedram ; Driussi, Francesco..
ACS Applied Nano Materials.  6 (2023)  7 - p. 5737-5746 , 2023
Link: https://doi.org/10.1021/..
 
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4

Novel experimental methodologies to reconcile large- and sm..:

Massarotto, Marco ; Driussi, Francesco ; Affanni, Antonio...
Solid-State Electronics.  200 (2023)  - p. 108569 , 2023
Link: https://doi.org/10.1016/..
 
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5

Reducing the tunneling barrier thickness of bilayer ferroel..:

, In: 2023 Device Research Conference (DRC),
Lancaster, Suzanne ; Segatto, Mattia ; Silva, Claudia... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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6

Analytical Procedure for the Extraction of Material Paramet..:

Segatto, Mattia ; Rupil, Filippo ; Esseni, David
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 3037-3042 , 2023
Link: https://doi.org/10.1109/..
 
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7

Editorial: Selected papers from the 8th Joint International..:

Driussi, Francesco ; Esseni, David ; Lizzit, Daniel.
Solid-State Electronics.  201 (2023)  - p. 108603 , 2023
Link: https://doi.org/10.1016/..
 
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8

Editorial: Letters from the 8th Joint International EUROSOI..:

Driussi, Francesco ; Esseni, David ; Lizzit, Daniel.
Solid-State Electronics.  194 (2022)  - p. 108354 , 2022
Link: https://doi.org/10.1016/..
 
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9

A study of metal-MoS2 contacts by using an in-house develop..:

Lizzit, Daniel ; Khakbaz, Pedram ; Driussi, Francesco..
Solid-State Electronics.  194 (2022)  - p. 108365 , 2022
Link: https://doi.org/10.1016/..
 
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10

Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to..:

Shao, Yanjie ; Pala, Marco ; Esseni, David.
IEEE Transactions on Electron Devices.  69 (2022)  4 - p. 2188-2195 , 2022
Link: https://doi.org/10.1109/..
 
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11

Reducing the Spike Rate in Deep Spiking Neural Networks:

, In: Proceedings of the International Conference on Neuromorphic Systems 2022,
Fontanini, Riccardo ; Esseni, David ; Loghi, Mirko - p. 1-8 , 2022
Link: https://dl.acm.org/doi/1..
 
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12

Accurate Nonlocal Impact Ionization Models for Conventional..:

Pilotto, Alessandro ; Esseni, David ; Selmi, Luca.
IEEE Journal of Quantum Electronics.  58 (2022)  5 - p. 1-11 , 2022
Link: https://doi.org/10.1109/..
 
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13

Multi-level Operation of FeFETs Memristors: the Crucial Rol..:

, In: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC),
Lizzit, Daniel ; Bernardi, Thomas ; Esseni, David - p. 344-347 , 2022
Link: https://doi.org/10.1109/..
 
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14

Neuromorphic object localization using resistive memories a..:

Moro, Filippo ; Hardy, Emmanuel ; Fain, Bruno...
Nature Communications.  13 (2022)  1 - p. , 2022
Link: https://doi.org/10.1038/..
 
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15

Limitations to Electrical Probing of Spontaneous Polarizati..:

Segatto, Mattia ; Fontanini, Riccardo ; Driussi, Francesco..
IEEE Journal of the Electron Devices Society.  10 (2022)  - p. 324-333 , 2022
Link: https://doi.org/10.1109/..
 
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