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Fan, Sheng-Kai
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1

Enhance the ESD Ability of UHV 300-V Circular LDMOS Compone..:

Lin, Po-Lin ; Chen, Shen-Li ; Fan, Sheng-Kai
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 108-113 , 2021
Link: https://doi.org/10.1109/..
 
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2

Improving the ESD Robustness of an Ultra-high Voltage nLDMO..:

, In: 2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan),
Lin, Po-Lin ; Chen, Shen-Li ; Fan, Sheng-Kai... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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3

Strengthened ESD Reliability of HV nLDMOSs with Embedded Ho..:

, In: 202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII),
Hong, Shi-Zhe ; Chen, Shen-Li ; Fan, Sheng-Kai... - p. 78-79 , 2020
Link: https://doi.org/10.1109/..
 
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4

Layout Strengthening the ESD Performance for High-Voltage N..:

Fan, Sheng-Kai ; Chen, Shen-Li ; Lin, Po-Lin.
Electronics.  9 (2020)  5 - p. 718 , 2020
Link: https://doi.org/10.3390/..
 
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5

ESD-capability Influences of UHV Circular nLDMOS Transistor..:

, In: 2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan),
Lan, Tien-Yu ; Chen, Shen-Li ; Fan, Sheng-Kai... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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6

ESD-capability Enhancement of Ultra-high Voltage nLDMOSs by..:

, In: 202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII),
Zhou, Yu-jie ; Chen, Shen Li ; Wu, Pei-Lin... - p. 59-60 , 2020
Link: https://doi.org/10.1109/..
 
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7

ESD-ability of Circular nLDMOS Transistors of UHV by Super-..:

, In: 202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII),
Lan, Tien-Yu ; Chen, Shen-Li ; Lin, Po-Lin... - p. 57-58 , 2020
Link: https://doi.org/10.1109/..
 
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8

A Novel SCR-based Schottky Diode and Lightly P-well Additio..:

, In: 2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan),
Fan, Sheng-Kai ; Chen, Shen-Li ; Lin, Po-Lin... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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9

ESD Immunity Impacts of the Drain-Side Heterojunction Devic..:

, In: 2019 IEEE 8th Global Conference on Consumer Electronics (GCCE),
Fan, Sheng-Kai ; Chen, Shen-Li ; Jhou, Yu-Lin.. - p. 81-82 , 2019
Link: https://doi.org/10.1109/..
 
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10

Electrostatic-Discharge-Immunity Impacts in 300 V nLDMOS by..:

Lin, Po-Lin ; Chen, Shen-Li ; Fan, Sheng-Kai
Electronics.  8 (2019)  12 - p. 1469 , 2019
Link: https://doi.org/10.3390/..
 
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11

ESD-Reliability Investigation 1of an UHV Elliptical LDMOS-S..:

, In: 2019 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-TW),
Lin, Po-Lin ; Chen, Shen-Li ; Wu, Pei-Lin.. - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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12

The Impact of Drift-region Length Reduction of nLDMOS on ES..:

, In: 2019 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE),
Fan, Sheng-Kai ; Chen, Shen-Li ; Lin, Po-Lin... - p. 199-200 , 2019
Link: https://doi.org/10.1109/..
 
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13

ESD-Immunity Influence of Ultra-high Voltage nLDMOS as the ..:

, In: 2019 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE),
Lin, Po-Lin ; Chen, Shen-Li ; Fan, Sheng-Kai... - p. 411-412 , 2019
Link: https://doi.org/10.1109/..
 
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14

Channel- & Drift Region's STI-Lengths Impacts of ESD Immuni..:

, In: 2019 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-TW),
Fan, Sheng-Kai ; Chen, Shen-Li ; Jhou, Yu-Lin.. - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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15

Evaluating the Drift-Region Length Effect of nLDMOS on ESD ..:

, In: 2019 IEEE 8th Global Conference on Consumer Electronics (GCCE),
Lin, Po-Lin ; Chen, Shen-Li ; Wu, Pei-Lin.. - p. 83-84 , 2019
Link: https://doi.org/10.1109/..
 
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