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Fang, Junpeng
133  Ergebnisse:
Personensuche X
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1

Insulating materials for realising carbon neutrality: Oppor..:

Li, Chuanyang ; Yang, Yang ; Xu, Guoqiang...
info:eu-repo/semantics/altIdentifier/wos/WOS:000825284800001.  , 2022
Link: https://hdl.handle.net/1..
 
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2

Insulating materials for realising carbon neutrality: Oppor..:

Li, Chuanyang ; Yang, Yang ; Xu, Guoqiang...
info:eu-repo/semantics/altIdentifier/doi/10.1049/hve2.12232.  , 2022
Link: https://hal.science/hal-..
 
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3

Insulating materials for realising carbon neutrality: Oppor..:

Li, Chuanyang ; Yang, Yang ; Xu, Guoqiang...
info:eu-repo/semantics/altIdentifier/doi/10.1049/hve2.12232.  , 2022
Link: https://hdl.handle.net/2..
 
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4

Insulating materials for realising carbon neutrality: Oppor..:

Li, Chuanyang ; Yang, Yang ; Xu, Guoqiang...
info:eu-repo/semantics/altIdentifier/doi/10.1049/hve2.12232.  , 2022
Link: https://hal.science/hal-..
 
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5

Insulating materials for realising carbon neutrality: Oppor..:

Li, Chuanyang ; Yang, Yang ; Xu, Guoqiang...
Li , C , Yang , Y , Xu , G , Zhou , Y , Jia , M , Zhong , S , Gao , Y , Park , C , Liu , Q , Wang , Y , Akram , S , Zeng , X , Li , Y , Liang , F , Cui , B , Fang , J , Tang , L , Zeng , Y , Hu , X , Gao , J , Mazzanti , G , He , J , Wang , J , Fabiani , D , Teyssedre , G , Cao , Y , Wang , F & Zi , Y 2022 , ' Insulating materials for realising carbon neutrality: Opportunities, remaining issues and challenges ' , High Voltage , vol. 7 , no. 4 , pp. 610-632 . https://doi.org/10.1049/hve2.12232.  , 2022
Link: https://research.manches..
 
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6

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Imp..:

Yanjuan Liu ; Dezhen Jia ; Junpeng Fang
D1: Semiconductor Devices.  , 2023
Link: https://doi.org/10.3390/..
 
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7

A Spatial Cross-Scale Attention Network and Global Average ..:

Lili Zhang ; Yuxuan Liu ; Lele Qu..
https://www.mdpi.com/2072-4292/15/2/350.  , 2023
Link: https://doi.org/10.3390/..
 
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8

A Spatial Cross-Scale Attention Network and Global Average ..:

Lili Zhang ; Yuxuan Liu ; Lele Qu..
AI Remote Sensing.  , 2023
Link: https://doi.org/10.3390/..
 
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9

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Imp..:

Yanjuan Liu ; Dezhen Jia ; Junpeng Fang
https://www.mdpi.com/2072-666X/14/5/950.  , 2023
Link: https://doi.org/10.3390/..
 
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10

Investigation of a 4H-SiC Trench MOSFET with Back-Side Supe..:

Lili Zhang ; Yuxuan Liu ; Junpeng Fang.
D1: Semiconductor Devices.  , 2022
Link: https://doi.org/10.3390/..
 
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11

Investigation of a 4H-SiC Trench MOSFET with Back-Side Supe..:

Lili Zhang ; Yuxuan Liu ; Junpeng Fang.
https://www.mdpi.com/2072-666X/13/10/1770.  , 2022
Link: https://doi.org/10.3390/..
 
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12

Insulating materials for realising carbon neutrality: Oppor..:

Chuanyang Li ; Yang Yang ; Guoqiang Xu...
https://doi.org/10.1049/hve2.12232.  , 2022
Link: https://doi.org/10.1049/..
 
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13

On-State Voltage Drop Analytical Model for 4H-SiC Trench IG..:

Yanjuan Liu ; Dezhen Jia ; Junpeng Fang
Materials for Energy Applications.  , 2022
Link: https://doi.org/10.3390/..
 
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14

On-State Voltage Drop Analytical Model for 4H-SiC Trench IG..:

Yanjuan Liu ; Dezhen Jia ; Junpeng Fang
https://www.mdpi.com/2073-4352/12/5/582.  , 2022
Link: https://doi.org/10.3390/..
 
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15

Presynaptic density determined by SV2A PET is closely assoc..:

Wang, Jie ; Huang, Qi ; He, Kun...
info:eu-repo/semantics/altIdentifier/doi/10.1002/alz.13817.  , 2024
Link: https://hdl.handle.net/2..
 
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