E-LIB Suche - Ergebnisse für: Fangqing, Zhang

1

Physica status solidi

Volume 134, Number 1: March 1 Physica status solidi ; Volume 134, Number 1, B

Abdeest, A. M ; Abdel-Gawad, M. M ; Aly, A. A... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Physica status solidi

Volume 99, Number 1: January 16 Physica status solidi ; Volume 99, Number 1, A

Agrawal, R. C ; Ahmed, S ; Attia, V. A... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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A study on surface morphologies of diamond films:

Yafei, Zhang ; Fangqing, Zhang ; Guanghua, Chen
Materials Letters. 20 (1994) 1-2 - p. 39-42 , 1994

Link: https://doi.org/10.1016/..

4

Synthesis and infrared absorption characteristics of boron-..:

Fangqing, Zhang ; Erqing, Xie ; Bin, Yang..
Materials Letters. 19 (1994) 3-4 - p. 115-118 , 1994

Link: https://doi.org/10.1016/..

5

A study of phase transformation between diamond and graphit..:

Yafei, Zhang ; Fangqing, Zhang ; Guanghua, Chen
Carbon. 32 (1994) 8 - p. 1415-1418 , 1994

Link: https://doi.org/10.1016/..

6

Study of influence of annealing on defects in diamond films..:

Wenjun, Zhang ; Fangqing, Zhang ; Quanzhong, Wu.
Materials Letters. 15 (1992) 4 - p. 292-297 , 1992

Link: https://doi.org/10.1016/..

7

Ion implantation of diamond-like carbon films:

Zhihao, Zheng ; Jinzhong, Xiang ; Changgang, Liao...
Vacuum. 42 (1991) 16 - p. 1085 , 1991

Link: https://doi.org/10.1016/..

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Effects of annealing on the optical properties of hydrogena..:

Fangqing, Zhang ; Bailian, Ma ; Guanghua, Chen
Materials Letters. 12 (1991) 1-2 - p. 63-66 , 1991

Link: https://doi.org/10.1016/..

9

Infrared and Raman spectra of reactively sputtered amorphou..:

Guanghua, Chen ; Fangqing, Zhang
Thin Solid Films. 185 (1990) 2 - p. 231-234 , 1990

Link: https://doi.org/10.1016/..

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Persistent photoconductivity in a-Si:H/a-Si1−xCx:H multilay..:

Fangqing, Zhang ; Xixiang, Xu ; Guanghua, Chen
Physica Status Solidi (a). 99 (1987) 1 - p. 165-170 , 1987

Link: https://doi.org/10.1002/..

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Persistent Photoconductivity in a-Si:H/a-Si1-xCx:H Multilay..:

, In: January 16,

Fangqing, Zhang ; Xixiang, Xu ; Guanghua, Chen - p. 165-170 , 1987

Link: https://doi.org/10.1515/..

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Persistent photoconductivity in undoped a-Si:H/a-Si1-xCx:H ..:

Xixiang, Xu ; Fangqing, Zhang ; Guanghua, Chen
Chinese Physics Letters. 4 (1987) 3 - p. 109-112 , 1987

Link: https://doi.org/10.1088/..

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Valence-electron properties of a-Si1 − xCx:H studied by UPS..:

Xixiang, Xu ; Fangqing, Zhang ; Guanghua, Chen
Journal of Non-Crystalline Solids. 90 (1987) 1-3 - p. 295-298 , 1987

Link: https://doi.org/10.1016/..

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A new method to estimate the ability of forming amorphous s..:

Jinhua, Wu ; Fangqing, Zhang ; Guanghua, Chen
Physica Status Solidi (a). 101 (1987) 1 - p. K1-K3 , 1987

Link: https://doi.org/10.1002/..

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ESR and IR studies on doped a-Si1 − xCx :H and a-Si1 − xNx:..:

Guanghua, Chen ; Fangqing, Zhang ; Xixiang, Xu.
Journal of Non-Crystalline Solids. 90 (1987) 1-3 - p. 275-282 , 1987

Link: https://doi.org/10.1016/..