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Fayyaz, Asad
108  Ergebnisse:
Personensuche X
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1

Datasheet Based SiC MOSFET Models for Accurate Switching Wa..:

, In: 2023 IEEE Design Methodologies Conference (DMC),
Zhang, Ziyao ; Fayyaz, Asad ; Almpanis, Ioannis... - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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2

Experimental analysis of mismatch in electro-thermal device..:

, In: 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia),
Fayyaz, Asad ; Li, Ying ; Evans, Paul... - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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3

Paralleling of Transient Overvoltage Protection Elements wi..:

, In: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe),
Fayyaz, Asad ; Ortiz, Matias Urrutia ; Wang, Zhenyu.. - p. 1-6 , 2022
Link: https://doi.org/10.1109/..
 
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4

Design Considerations for High-Voltage High-Current Bi-Dire..:

, In: 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe),
Fayyaz, Asad ; Wang, Zhenyu ; Ortiz, Matias Urrutia.. - p. P.1-P.10 , 2021
Link: https://doi.org/10.23919..
 
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5

Investigation of Temperature Distribution in SIC Power Modu..:

, In: 2019 20th International Symposium on Power Electronics (Ee),
Olanrewaju, Olufisayo ; Yang, Zineng ; Evans, Nathan... - p. 1-5 , 2019
Link: https://doi.org/10.1109/..
 
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6

Short-circuit robustness of parallel SiC MOSFETs and fail-s..:

, In: 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe),
Boige, Francois ; Fayyaz, Asad ; Castellazzi, Alberto.. - p. P.1-P.10 , 2019
Link: https://doi.org/10.23919..
 
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7

An Efficient Simulation Methodology to Quantify the Impact ..:

Borghese, Alessandro ; Catalano, Antonio Pio ; Riccio, Michele...
Materials Science Forum.  963 (2019)  - p. 855-858 , 2019
Link: https://doi.org/10.4028/..
 
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8

V subthreshold hysteresis technology and temperature depend..:

Asllani, Besar ; Fayyaz, Asad ; Castellazzi, Alberto..
Microelectronics Reliability.  88-90 (2018)  - p. 604-609 , 2018
Link: https://doi.org/10.1016/..
 
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9

SiC MOSFET Device Parameter Spread and Ruggedness of Parall..:

Castellazzi, Alberto ; Fayyaz, Asad ; Kraus, Rainer
Materials Science Forum.  924 (2018)  - p. 811-817 , 2018
Link: https://doi.org/10.4028/..
 
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10

A Comprehensive Study on the Avalanche Breakdown Robustness..:

Fayyaz, Asad ; Romano, Gianpaolo ; Urresti, Jesus...
Energies.  10 (2017)  4 - p. 452 , 2017
Link: https://doi.org/10.3390/..
 
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11

Antimicrobial drug residues in poultry products and implica..:

Mund, Muhammad Danish ; Khan, Umair Hassan ; Tahir, Uruj..
International Journal of Food Properties.  20 (2016)  7 - p. 1433-1446 , 2016
Link: https://doi.org/10.1080/..
 
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12

UIS failure mechanism of SiC power MOSFETs:

, In: 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),
Fayyaz, Asad ; Castellazzi, Alberto ; Romano, Gianpaolo... - p. 118-122 , 2016
Link: https://doi.org/10.1109/..
 
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13

Short-circuit robustness of SiC Power MOSFETs: Experimental..:

, In: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD),
Castellazzi, Alberto ; Fayyaz, Asad ; Yang, Li.. - p. 71-74 , 2014
Link: https://doi.org/10.1109/..
 
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14

Performance and robustness testing of SiC power devices:

, In: 6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012),
Fayyaz, Asad ; Castellazzi, Alberto - p. 1-5 , 2012
Link: https://doi.org/10.1049/..
 
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15

Object Detection at Level Crossing Using Deep Learning:

Fayyaz, Muhammad Asad Bilal ; Johnson, Christopher
Micromachines.  11 (2020)  12 - p. 1055 , 2020
Link: https://doi.org/10.3390/..
 
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