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X
Fazzini, P.F.
948  Ergebnisse:
Personensuche X
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1

Confinement effects on the shape and composition of bimetal..:

Li, X. ; Hungria, T. ; Garcia Marcelot, C....
Chemical Communications.  52 (2016)  11 - p. 2362-2365 , 2016
Link: https://doi.org/10.1039/..
 
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2

A transparent flexible z-axis sensitive multi-touch panel b..:

Sangeetha, N. M. ; Gauvin, M. ; Decorde, N....
Nanoscale.  7 (2015)  29 - p. 12631-12640 , 2015
Link: https://doi.org/10.1039/..
 
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3

Charge transport and interdot coupling tuned by the tunnel ..:

Dugay, J. ; Tan, R. P. ; Ibrahim, M....
Physical Review B.  89 (2014)  4 - p. , 2014
Link: https://doi.org/10.1103/..
 
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4

Tuning Deposition of Magnetic Metallic Nanoparticles from P..:

Dugay, J. ; Tan, R. P. ; Loubat, A....
Langmuir.  30 (2014)  30 - p. 9028-9035 , 2014
Link: https://doi.org/10.1021/..
 
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5

Extended defects and precipitation in heavily B-doped silic..:

Cojocaru-Mirédin, O. ; Cristiano, F. ; Fazzini, P.-F...
Thin Solid Films.  534 (2013)  - p. 62-66 , 2013
Link: https://doi.org/10.1016/..
 
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6

Evolution and ripening of Ge crystals grown by nanoscale in..:

Yam, V. ; Cammilleri, V. D. ; Fossard, F....
Journal of Applied Physics.  109 (2011)  10 - p. , 2011
Link: https://doi.org/10.1063/..
 
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7

Quantum confinement effects and strain-induced band-gap ene..:

Demichel, O. ; Calvo, V. ; Noé, P....
Physical Review B.  83 (2011)  24 - p. , 2011
Link: https://doi.org/10.1103/..
 
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8

Transfer of physically-based models from process to device ..:

Bazizi, E.M. ; Pakfar, A. ; Fazzini, P.F....
Thin Solid Films.  518 (2010)  9 - p. 2427-2430 , 2010
Link: https://doi.org/10.1016/..
 
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9

Effect of Germanium content and strain on the formation of ..:

Fazzini, P.F. ; Cristiano, F. ; Talbot, E....
Thin Solid Films.  518 (2010)  9 - p. 2338-2341 , 2010
Link: https://doi.org/10.1016/..
 
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10

Atomic scale study of a MOS structure with an ultra-low ene..:

Duguay, S. ; Ngamo, M. ; Fazzini, P.F....
Thin Solid Films.  518 (2010)  9 - p. 2398-2401 , 2010
Link: https://doi.org/10.1016/..
 
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11

Modeling of the effect of the buried Si–SiO2 interface on t..:

Bazizi, E. M. ; Fazzini, P. F. ; Pakfar, A....
Journal of Applied Physics.  107 (2010)  7 - p. , 2010
Link: https://doi.org/10.1063/..
 
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12

End-of-range defects in germanium and their role in boron d..:

Panciera, F. ; Fazzini, P. F. ; Collet, M....
Applied Physics Letters.  97 (2010)  1 - p. , 2010
Link: https://doi.org/10.1063/..
 
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13

Growth kinetics of Ge crystals on silicon oxide by nanoscal..:

Cammilleri, V. D. ; Yam, V. ; Fossard, F....
Journal of Applied Physics.  106 (2009)  9 - p. , 2009
Link: https://doi.org/10.1063/..
 
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14

Modelling of Boron Trapping at End-of-Range defects in pre-..:

Bazizi, E.M. ; Fazzini, P.F. ; Zechner, C....
Materials Science and Engineering: B.  154-155 (2008)  - p. 275-278 , 2008
Link: https://doi.org/10.1016/..
 
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15

Lateral epitaxial growth of germanium on silicon oxide:

Cammilleri, V. D. ; Yam, V. ; Fossard, F....
Applied Physics Letters.  93 (2008)  4 - p. , 2008
Link: https://doi.org/10.1063/..
 
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