Feil, Maximilian W.
259  Ergebnisse:
Personensuche X
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1

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Grasser, Tibor ; Feil, Maximilian W. ; Waschneck, Katja...
IEEE Transactions on Electron Devices.  71 (2024)  7 - p. 4218-4226 , 2024
 
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2

Prompt Shift of On-State Resistance in LDMOS Devices: Cause..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
 
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3

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans...
IEEE Transactions on Electron Devices.  71 (2024)  7 - p. 4210-4217 , 2024
 
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4

Recent Developments in Understanding the Gate Switching Ins..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
 
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5

Towards Understanding the Physics of Gate Switching Instabi..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
 
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6

Restrictive antenna rules limiting PID degradation for MOS ..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
 
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10

Cover Picture: Templated‐Assembly of CsPbBr3 Perovskite Nan..:

Vila‐Liarte, David ; Feil, Maximilian W. ; Manzi, Aurora...
Angewandte Chemie International Edition.  59 (2020)  40 - p. 17305-17305 , 2020
 
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12

Templated‐Assembly of CsPbBr3 Perovskite Nanocrystals into ..:

Vila‐Liarte, David ; Feil, Maximilian W. ; Manzi, Aurora...
Angewandte Chemie International Edition.  59 (2020)  40 - p. 17750-17756 , 2020
 
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14

Spontane Kristallisation von Perowskit‐Nanokristallen in un..:

Huang, He ; Li, Yanxiu ; Tong, Yu...
Angewandte Chemie.  131 (2019)  46 - p. 16710-16715 , 2019
 
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15

Spontaneous Crystallization of Perovskite Nanocrystals in N..:

Huang, He ; Li, Yanxiu ; Tong, Yu...
Angewandte Chemie International Edition.  58 (2019)  46 - p. 16558-16562 , 2019
 
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