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Feklisova, Olga V.
25  Ergebnisse:
Personensuche X
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1

Electron‐Beam‐Induced Current and Deep‐Level Transient Spec..:

Feklisova, Olga V. ; Orlov, Valery I. ; Yakimov, Eugene B.
physica status solidi (a).  218 (2021)  23 - p. , 2021
Link: https://doi.org/10.1002/..
 
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2

Transformation of deep-level spectrum of irradiated silicon..:

Feklisova, Olga V ; Yarykin, Nikolai A
Semiconductor Science and Technology.  12 (1997)  6 - p. 742-749 , 1997
Link: https://doi.org/10.1088/..
 
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3

Formation of Electrical Activity of Dislocations in Si duri..:

Kononchuk, O.V. ; Orlov, V. ; Feklisova, Olga V..
Solid State Phenomena.  51-52 (1996)  - p. 15-20 , 1996
Link: https://doi.org/10.4028/..
 
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4

Metastability of Electrical Properties of Dislocations in S..:

Feklisova, Olga V. ; Yakimov, Eugene B. ; Yarykin, Nikolai
Materials Science Forum.  38-41 (1989)  - p. 1373-1378 , 1989
Link: https://doi.org/10.4028/..
 
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5

Effect of Compressive and Stretching Strains on the Disloca..:

Sobolev, N. A. ; Kalyadin, A. E. ; Feklisova, O. V..
Semiconductors.  55 (2021)  7 - p. 633-636 , 2021
Link: https://doi.org/10.1134/..
 
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6

Study of single-layer stacking faults in 4H–SiC by deep lev..:

Feklisova, O. V. ; Yakimov, E. E. ; Yakimov, E. B.
Applied Physics Letters.  116 (2020)  17 - p. , 2020
Link: https://doi.org/10.1063/..
 
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7

Electrical Activity of Extended Defects in Multicrystalline..:

Pescherova, S. M. ; Yakimov, E. B. ; Nepomnyashchikh, A. I....
Semiconductors.  52 (2018)  2 - p. 254-259 , 2018
Link: https://doi.org/10.1134/..
 
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8

Recombination activity of interfaces in multicrystalline si..:

Peshcherova, S. M. ; Yakimov, E. B. ; Nepomnyashchikh, A. I...
Semiconductors.  49 (2015)  6 - p. 724-728 , 2015
Link: https://doi.org/10.1134/..
 
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9

Effect of copper on the recombination activity of extended ..:

Feklisova, O. V. ; Yakimov, E. B.
Semiconductors.  49 (2015)  6 - p. 716-719 , 2015
Link: https://doi.org/10.1134/..
 
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10

Influence of metal impurities on recombination activity of ..:

Feklisova, O. V. ; Yu, X. ; Yang, D..
Semiconductors.  47 (2013)  2 - p. 232-234 , 2013
Link: https://doi.org/10.1134/..
 
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11

Effect of contamination with iron on the electron-beam-indu..:

Feklisova, O. V. ; Yu, X. ; Yang, D..
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.  6 (2012)  6 - p. 897-900 , 2012
Link: https://doi.org/10.1134/..
 
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12

Electrical properties of plastically deformed silicon due t..:

Feklisova, O. V. ; Yakimov, E. B.
Physics of the Solid State.  53 (2011)  6 - p. 1240-1243 , 2011
Link: https://doi.org/10.1134/..
 
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13

SEM Investigation of the electrical properties of silicon r..:

Brantov, S. K. ; Feklisova, O. V. ; Yakimov, E. B.
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.  5 (2011)  5 - p. 954-957 , 2011
Link: https://doi.org/10.1134/..
 
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14

X-ray beam induced current method at the laboratory x-ray s..:

Fahrtdinov, R. R. ; Feklisova, O. V. ; Grigoriev, M. V....
Review of Scientific Instruments.  82 (2011)  9 - p. , 2011
Link: https://doi.org/10.1063/..
 
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15

An application of gold diffusion for defect investigation i..:

Feklisova, O.V. ; Yakimov, E.B.
Physica B: Condensed Matter.  404 (2009)  23-24 - p. 4681-4684 , 2009
Link: https://doi.org/10.1016/..
 
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