Feldis, H.
8  Ergebnisse:
Personensuche X
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3

Comparative study of non-polar switching behaviors of NiO- ..:

, In: 2010 IEEE International Memory Workshop,
Jousseaume, V. ; Feldis, H. ; Minoret, S.... - p. 1-4 , 2010
 
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4

Back-end-of-line integration approaches for resistive memor..:

, In: 2009 IEEE International Interconnect Technology Conference,
Jousseaume, V. ; Buckley, J. ; Bernard, Y.... - p. None , 2009
 
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5

Efficiency of reducing and oxidizing ash plasmas in prevent..:

Posseme, N. ; Chevolleau, T. ; David, T....
Microelectronic Engineering.  85 (2008)  8 - p. 1842-1849 , 2008
 
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6

A new damascene architecture for high-performance metal–ins..:

Farcy, A. ; Torres, J. ; Arnal, V....
Microelectronic Engineering.  70 (2003)  2-4 - p. 368-372 , 2003
 
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7

Integration of Cu/SiOC in Cu dual damascene interconnect fo..:

Fayolle, M ; Torres, J ; Passemard, G...
Microelectronic Engineering.  64 (2002)  1-4 - p. 35-42 , 2002
 
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