E-LIB Suche - Ergebnisse für: Feneberg, M.

1

Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered Ga..:

Henksmeier, T. ; Schulz, J.F. ; Kluth, E....
Journal of Crystal Growth. 593 (2022) - p. 126756 , 2022

Link: https://doi.org/10.1016/..

2

Anisotropic Optical Properties of Metastable (011¯2)α−Ga2O3..:

Kracht, M. ; Karg, A. ; Feneberg, M....
Physical Review Applied. 10 (2018) 2 - p. , 2018

Link: https://doi.org/10.1103/..

3

Band gap of corundumlike α−Ga2O3 determined by absorption a..:

Segura, A. ; Artús, L. ; Cuscó, R...
Physical Review Materials. 1 (2017) 2 - p. , 2017

Link: https://doi.org/10.1103/..

4

Stimulated emission via electron-hole plasma recombination ..:

Minj, A. ; Romero, M. F. ; Wang, Y....
Applied Physics Letters. 109 (2016) 22 - p. , 2016

Link: https://doi.org/10.1063/..

5

Inversion of absorption anisotropy and bowing of crystal fi..:

Neumann, M. D. ; Esser, N. ; Chauveau, J.-M...
Applied Physics Letters. 108 (2016) 22 - p. , 2016

Link: https://doi.org/10.1063/..

6

Effect of carrier gas in hydride vapor phase epitaxy on opt..:

Gridneva, E. ; Richter, E. ; Feneberg, M....
physica status solidi (b). 252 (2015) 5 - p. 1180-1188 , 2015

Link: https://doi.org/10.1002/..

7

Electroreflectance characterization of AlInGaN/GaN high-ele..:

Bokov, P Yu ; Brazzini, T ; Romero, M F...
Semiconductor Science and Technology. 30 (2015) 8 - p. 085014 , 2015

Link: https://doi.org/10.1088/..

8

Zeeman spectroscopy of the internal transition 4T1 to 6A1 o..:

Neuschl, B. ; Gödecke, M. L. ; Thonke, K....
Journal of Applied Physics. 118 (2015) 21 - p. , 2015

Link: https://doi.org/10.1063/..

9

Composition dependent valence band order in c-oriented wurt..:

Neuschl, B. ; Helbing, J. ; Knab, M....
Journal of Applied Physics. 116 (2014) 11 - p. , 2014

Link: https://doi.org/10.1063/..

10

Structural and optical properties of MBE-grown asymmetric c..:

Wecker, T. ; Hörich, F. ; Feneberg, M....
physica status solidi (b). 252 (2014) 5 - p. 873-878 , 2014

Link: https://doi.org/10.1002/..

11

Nanoscale characterisation of semiconductors by cathodolumi..:

Thonke, K ; Tischer, I ; Hocker, M...
IOP Conference Series: Materials Science and Engineering. 55 (2014) - p. 012018 , 2014

Link: https://doi.org/10.1088/..

12

Direct determination of the silicon donor ionization energy..:

Neuschl, B. ; Thonke, K. ; Feneberg, M....
Applied Physics Letters. 103 (2013) 12 - p. , 2013

Link: https://doi.org/10.1063/..

13

Luminescence from two-dimensional electron gases in InAlN/G..:

Romero, M. F. ; Feneberg, M. ; Moser, P....
Applied Physics Letters. 100 (2012) 21 - p. , 2012

Link: https://doi.org/10.1063/..

14

Optical properties of MgZnO alloys: Excitons and exciton-ph..:

Neumann, M. D. ; Cobet, C. ; Esser, N....
Journal of Applied Physics. 110 (2011) 1 - p. , 2011

Link: https://doi.org/10.1063/..

15

High quality AlGaN epilayers grown on sapphire using SiNint..:

Forghani, K. ; Klein, M. ; Lipski, F....
Journal of Crystal Growth. 315 (2011) 1 - p. 216-219 , 2011

Link: https://doi.org/10.1016/..