E-LIB Suche - Ergebnisse für: Filatov, D.O.

1

Performance Evaluation of TCP Data Transmission in 5G mmWav..:

Krasilov, A. N. ; Susloparov, M. V. ; Filatov, O. O..
Journal of Communications Technology and Electronics. 65 (2020) 6 - p. 735-740 , 2020

Link: https://doi.org/10.1134/..

2

Epitaxial n+-Ge/p+-Si(0 0 1) heterostructures with ultra sh..:

Titova, A.M. ; Shengurov, V.G. ; Filatov, D.O....
Materials Science and Engineering: B. 289 (2023) - p. 116219 , 2023

Link: https://doi.org/10.1016/..

3

Effect of Temperature on Dissipative Electron Tunneling thr..:

Krevchik, V. D. ; Semenov, M. B. ; Filatov, D. O..
Technical Physics. 68 (2023) 4 - p. 75-80 , 2023

Link: https://doi.org/10.1134/..

4

Effect of Noise on Resistive Switching of an Yttria Stabili..:

Gorshkov, O. N. ; Filatov, D. O. ; Koriazhkina, M. N...
Journal of Experimental and Theoretical Physics. 137 (2023) 5 - p. 700-705 , 2023

Link: https://doi.org/10.1134/..

5

The Formation of Au Nanoparticles in SiO2–TiO2 Films by Loc..:

Krevchik, V. D. ; Filatov, D. O. ; Semenov, M. B.
Technical Physics. 68 (2023) 4 - p. 102-106 , 2023

Link: https://doi.org/10.1134/..

6

Effect of internal noise on the relaxation time of an yttri..:

Filatov, D.O. ; Koryazhkina, M.N. ; Novikov, A.S....
Chaos, Solitons & Fractals. 156 (2022) - p. 111810 , 2022

Link: https://doi.org/10.1016/..

7

Resistive state relaxation time in ZrO2(Y)-based memristive..:

Koryazhkina, M.N. ; Filatov, D.O. ; Shishmakova, V.A....
Chaos, Solitons & Fractals. 162 (2022) - p. 112459 , 2022

Link: https://doi.org/10.1016/..

8

Resonant Activation of Resistance Switching in Memristors B..:

Ryabova, M A ; Filatov, D O ; Shenina, M E...
Journal of Physics: Conference Series. 2227 (2022) 1 - p. 012020 , 2022

Link: https://doi.org/10.1088/..

9

Technology and neuromorphic functionality of magnetron-sput..:

, In: Metal Oxides for Non-volatile Memory,

Mikhaylov, A.N. ; Koryazhkina, M.N. ; Korolev, D.S.... - p. 109-131 , 2022

Link: https://doi.org/10.1016/..

10

Dissipative Tunneling of Electrons in Vertically Coupled Do..:

Semenov, M. B. ; Krevchik, V. D. ; Filatov, D. O....
Technical Physics. , 2022

Link: https://doi.org/10.1134/..

11

Resistive switching in metal-oxide memristive materials and..:

, In: Metal Oxides for Non-volatile Memory,

Mikhaylov, A.N. ; Koryazhkina, M.N. ; Korolev, D.S.... - p. 33-78 , 2022

Link: https://doi.org/10.1016/..

12

Contributors:

, In: Metal Oxides for Non-volatile Memory,

Antonov, I.N. ; Belov, A.I. ; Bonafos, C.... - p. ix-xi , 2022

Link: https://doi.org/10.1016/..

13

Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by..:

Shengurov, V.G. ; Chalkov, V.Yu. ; Denisov, S.A....
Journal of Crystal Growth. 578 (2022) - p. 126421 , 2022

Link: https://doi.org/10.1016/..

14

Probing effective field theory operators in the associated ..:

The CMS collaboration ; Tonon, N. ; Aarup Petersen, H....
Journal of High Energy Physics. 2021 (2021) 12 - p. , 2021

Link: https://doi.org/10.1007/..

15

In situ Investigation of Individual Filament Growth in Cond..:

Ryabova, M A ; Antonov, D A ; Kruglov, A V...
Journal of Physics: Conference Series. 2086 (2021) 1 - p. 012205 , 2021

Link: https://doi.org/10.1088/..