E-LIB Suche - Ergebnisse für: Fillot, F.

1

Inside the ovonic threshold switching (OTS) device based on..:

Laguna, C. ; Bernard, M. ; Garrione, J....
Journal of Applied Physics. 133 (2023) 7 - p. , 2023

Link: https://doi.org/10.1063/..

2

The effect of Ge content on structural evolution of Ge-rich..:

Prazakova, L. ; Nolot, E. ; Martinez, E....
Materialia. 21 (2022) - p. 101345 , 2022

Link: https://doi.org/10.1016/..

3

Transient thermal conductivity in PECVD SiNx at high temper..:

Hadi, M. ; Pailhès, S. ; Debord, R....
Materialia. 26 (2022) - p. 101574 , 2022

Link: https://doi.org/10.1016/..

4

Temperature driven structural evolution of Ge-rich GeSbTe a..:

Prazakova, L. ; Nolot, E. ; Martinez, E....
Journal of Applied Physics. 128 (2020) 21 - p. , 2020

Link: https://doi.org/10.1063/..

5

Thermal conductivity of carbon doped GeTe thin films in amo..:

Kusiak, Andrzej ; Battaglia, Jean-Luc ; Noé, Pierre..
Journal of Physics: Conference Series. 745 (2016) - p. 032104 , 2016

Link: https://doi.org/10.1088/..

6

Direct wafer bonding of amorphous or densified atomic layer..:

Beche, E. ; Fournel, F. ; Larrey, V...
Microsystem Technologies. 21 (2015) 5 - p. 953-959 , 2015

Link: https://doi.org/10.1007/..

7

The effect of Ta interface on the crystallization of amorph..:

Ghezzi, G. E. ; Noé, P. ; Marra, M....
Applied Physics Letters. 104 (2014) 22 - p. , 2014

Link: https://doi.org/10.1063/..

8

Crystallization of Ge2Sb2Te5 nanometric phase change materi..:

Ghezzi, G. E. ; Morel, R. ; Brenac, A....
Applied Physics Letters. 101 (2012) 23 - p. , 2012

Link: https://doi.org/10.1063/..

9

Evidence of Heterogeneous Strain during Crystallization of ..:

Fillot, F. ; Loubriat, S. ; Gergaud, P..
Electrochemical and Solid-State Letters. 14 (2011) 7 - p. H285-H287 , 2011

Link: https://doi.org/10.1149/..

10

GeTe phase change material and Ti based electrode: Study of..:

Loubriat, S. ; Muyard, D. ; Fillot, F....
Microelectronic Engineering. 88 (2011) 5 - p. 817-821 , 2011

Link: https://doi.org/10.1016/..

11

Growth of RuO2 thin films by liquid injection atomic layer ..:

Hušeková, K. ; Dobročka, E. ; Rosová, A....
Thin Solid Films. 518 (2010) 16 - p. 4701-4704 , 2010

Link: https://doi.org/10.1016/..

12

Embedding of reduced pressure-chemical vapor deposition gro..:

Masarotto, L. ; Yckache, K. ; Fanton, A...
Thin Solid Films. 518 (2010) 19 - p. 5382-5386 , 2010

Link: https://doi.org/10.1016/..

13

Work Function Tuning of Ti[sub x]Si[sub y]N[sub z] Electrod..:

Fillot, F. ; Maı̂trejean, S. ; Pierre, F..
Electrochemical and Solid-State Letters. 12 (2009) 7 - p. H272 , 2009

Link: https://doi.org/10.1149/..

14

Impact of the H2 bake temperature on the structural propert..:

Hartmann, J.M. ; Bogumilowciz, Y. ; Abbadie, A...
Journal of Crystal Growth. 310 (2008) 10 - p. 2493-2502 , 2008

Link: https://doi.org/10.1016/..

15

Experimental study of the minimum metal gate thickness requ..:

Fillot, F. ; Maîtrejean, S. ; Matko, I..
Applied Physics Letters. 92 (2008) 2 - p. , 2008

Link: https://doi.org/10.1063/..