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Florovič, M.
15  Ergebnisse:
Personensuche X
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1

Average Temperature Determination of AlGaN/GaN HEMT Utilizi..:

Florovič, M. ; Kováč, J. ; Chvála, A....
IEEE Transactions on Electron Devices.  70 (2023)  11 - p. 5803-5806 , 2023
Link: https://doi.org/10.1109/..
 
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2

HEMT Average Temperature Determination Utilizing Low-Power ..:

Florovic, M. ; Kovac, J. ; Chvala, A....
IEEE Transactions on Electron Devices.  69 (2022)  10 - p. 5484-5489 , 2022
Link: https://doi.org/10.1109/..
 
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3

Models for the self-heating evaluation of a gallium nitride..:

Florovič, M ; Kováč jr, J ; Kováč, J...
Semiconductor Science and Technology.  36 (2021)  2 - p. 025019 , 2021
Link: https://doi.org/10.1088/..
 
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4

Quasi-static I-V characterization utilized for isothermal a..:

, In: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM),
Florovic, M. ; Kovac, J. ; Chvala, A... - p. 5-9 , 2020
Link: https://doi.org/10.1109/..
 
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5

Rigorous channel temperature analysis verified for InAlN/Al..:

Florovič, M ; Szobolovszký, R ; Kováč Jr, J...
Semiconductor Science and Technology.  34 (2019)  6 - p. 065021 , 2019
Link: https://doi.org/10.1088/..
 
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6

AlGaN/GaN HEMT channel temperature determination utilizing ..:

Florovič, M ; Szobolovszký, R ; Kováč Jr, J...
Semiconductor Science and Technology.  35 (2019)  2 - p. 025006 , 2019
Link: https://doi.org/10.1088/..
 
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7

Temperature-induced instability of the threshold voltage in..:

Florovič, M ; Stoklas, R ; Kováč, J.
Semiconductor Science and Technology.  32 (2017)  2 - p. 025017 , 2017
Link: https://doi.org/10.1088/..
 
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8

Electrical and Optical Characterization of Ni/Al0.3Ga0.7N/G..:

Kordoš, P. ; Škriniarová, J. ; Chvála, A....
Journal of Electronic Materials.  41 (2012)  11 - p. 3017-3020 , 2012
Link: https://doi.org/10.1007/..
 
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9

Preparation and properties of Zn delta-doped GaAs/AlGaAs he..:

Kováč, J. ; Škriniarová, J. ; Florovič, M....
Microelectronics Journal.  40 (2009)  3 - p. 562-564 , 2009
Link: https://doi.org/10.1016/..
 
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10

Investigation of trap effects in AlGaN∕GaN field-effect tra..:

Kordoš, P. ; Donoval, D. ; Florovič, M...
Applied Physics Letters.  92 (2008)  15 - p. , 2008
Link: https://doi.org/10.1063/..
 
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11

High-temperature performance of AlGaN/GaN HFETs and MOSHFET:

Donoval, D. ; Florovič, M. ; Gregušová, D...
Microelectronics Reliability.  48 (2008)  10 - p. 1669-1672 , 2008
Link: https://doi.org/10.1016/..
 
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12

Determination of the doping concentration profile in Si δ-d..:

Srnanek, R. ; Geurts, J. ; Lentze, M....
Thin Solid Films.  497 (2006)  1-2 - p. 7-15 , 2006
Link: https://doi.org/10.1016/..
 
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13

Micro-Raman study of photoexcited plasma in GaAs bevelled s..:

Srnanek, R. ; Irmer, G. ; Geurts, J....
Applied Surface Science.  243 (2005)  1-4 - p. 96-105 , 2005
Link: https://doi.org/10.1016/..
 
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14

Determination of doping concentrations in very thin GaAs la..:

Srnanek, R. ; Vesely, M. ; Vincze, A....
Vacuum.  80 (2005)  1-3 - p. 20-23 , 2005
Link: https://doi.org/10.1016/..
 
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15

Investigation of MOVPE growth of silicon δ-doped GaAs epila..:

Ściana, B. ; Radziewicz, D. ; Paszkiewicz, B....
Vacuum.  74 (2004)  2 - p. 263-267 , 2004
Link: https://doi.org/10.1016/..
 
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