E-LIB Suche - Ergebnisse für: Foxon, C.T.

1

Exciton and Phonon Radiative Linewidths in Monolayer Boron ..:

Cassabois, G. ; Fugallo, G. ; Elias, C....
Physical Review X. 12 (2022) 1 - p. , 2022

Link: https://doi.org/10.1103/..

2

High-temperature Plasma-assisted Molecular Beam Epitaxy of ..:

, In: 2019 Compound Semiconductor Week (CSW),

Cheng, T. S. ; Summerfield, A. ; Mellor, C. J.... - p. 1-1 , 2019

Link: https://doi.org/10.1109/..

3

Direct band-gap crossover in epitaxial monolayer boron nitr..:

Elias, C. ; Valvin, P. ; Pelini, T....
Nature Communications. 10 (2019) 1 - p. , 2019

Link: https://doi.org/10.1038/..

4

Novel GaN-based vertical heterostructure field effect trans..:

Qian, H. ; Lee, K.B. ; Vajargah, S. Hosseini...
Journal of Crystal Growth. 459 (2017) - p. 185-188 , 2017

Link: https://doi.org/10.1016/..

5

Molecular beam epitaxy as a growth technique for achieving ..:

Novikov, S.V. ; Kent, A.J. ; Foxon, C.T.
Progress in Crystal Growth and Characterization of Materials. 63 (2017) 2 - p. 25-39 , 2017

Link: https://doi.org/10.1016/..

6

Terahertz conductivity of the highly mismatched amorphous a..:

Vaisakh, C P ; Foxon, C T ; Novikov, S V.
Semiconductor Science and Technology. 32 (2017) 12 - p. 125009 , 2017

Link: https://doi.org/10.1088/..

7

Deep ultraviolet emission in hexagonal boron nitride grown ..:

Vuong, T Q P ; Cassabois, G ; Valvin, P...
2D Materials. 4 (2017) 2 - p. 021023 , 2017

Link: https://doi.org/10.1088/..

8

An atomic carbon source for high temperature molecular beam..:

Albar, J. D. ; Summerfield, A. ; Cheng, T. S....
Scientific Reports. 7 (2017) 1 - p. , 2017

Link: https://doi.org/10.1038/..

9

Unintentional boron incorporation in AlGaN layers grown by ..:

Novikov, S.V. ; Foxon, C.T.
Journal of Crystal Growth. 477 (2017) - p. 154-158 , 2017

Link: https://doi.org/10.1016/..

10

X-ray detection with zinc-blende (cubic) GaN Schottky diode:

Gohil, T. ; Whale, J. ; Lioliou, G....
Scientific Reports. 6 (2016) 1 - p. , 2016

Link: https://doi.org/10.1038/..

11

Highly mismatched GaN1−xSbxalloys: synthesis, structure and..:

Yu, K M ; Sarney, W L ; Novikov, S V...
Semiconductor Science and Technology. 31 (2016) 8 - p. 083001 , 2016

Link: https://doi.org/10.1088/..

12

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes:

Qian, H ; Lee, K B ; Vajargah, S Hosseini...
Semiconductor Science and Technology. 31 (2016) 6 - p. 065020 , 2016

Link: https://doi.org/10.1088/..

13

Growth of free-standing bulk wurtzite Al Ga1−N layers by mo..:

Novikov, S.V. ; Staddon, C.R. ; Sahonta, S.-L....
Journal of Crystal Growth. 456 (2016) - p. 151-154 , 2016

Link: https://doi.org/10.1016/..

14

Intermixing studies in GaN_1−xSb_x highly mismatched alloys:

Sarney, Wendy L. ; Svensson, Stefan P. ; Ting, Min...
Applied Optics. 56 (2016) 3 - p. B64 , 2016

Link: https://doi.org/10.1364/..

15

Effects of native defects on properties of low temperature ..:

Yu, K M ; Ting, Min ; Novikov, S V...
Journal of Physics D: Applied Physics. 48 (2015) 38 - p. 385101 , 2015

Link: https://doi.org/10.1088/..