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2024 IEEE International Solid-State Circuits Conference (ISSCC) ,
1
34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm2 and 3.78Mb/mm2 Fully-D..:
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2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
4
A 3nm Fin-FET 19.87-Mbit/mm2 2RW Pseudo Dual-Port 6T SRAM w..:
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2024 IEEE International Solid-State Circuits Conference (ISSCC) ,
5
20.1 NVE: A 3nm 23.2TOPS/W 12b-Digital-CIM-Based Neural Eng..:
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2023 International Electron Devices Meeting (IEDM) ,
6
High-Speed Embedded Memory for AI and High-Performance Comp..:
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2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
7
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with..:
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2023 IEEE International Solid- State Circuits Conference (ISSCC) ,
8
A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Base..:
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2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
9
A 3nm 256Mb SRAM in FinFET Technology with New Array Bankin..:
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
10
A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision ..:
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2022 IEEE International Solid- State Circuits Conference (ISSCC) ,
11
A 5-nm 254-TOPS/W 221-TOPS/mm2 Fully-Digital Computing-in-M..:
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2020 IEEE International Solid- State Circuits Conference - (ISSCC) ,
12
15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinF..:
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