E-LIB Suche - Ergebnisse für: Fukasawa, Masanaga

1

Surface chemical reactions of etch stop prevention in plasm..:

Tercero, Jomar U. ; Hirata, Akiko ; Isobe, Michiro...
Surface and Coatings Technology. 477 (2024) - p. 130365 , 2024

2

High-throughput SiN ALE: surface reaction and ion-induced d..:

Hirata, Akiko ; Fukasawa, Masanaga ; Tercero, Jomar Unico...
Japanese Journal of Applied Physics. 62 (2023) SI - p. SI1015 , 2023

Link: https://doi.org/10.35848..

3

Structural and electrical characteristics of ion-induced Si..:

Hirata, Akiko ; Fukasawa, Masanaga ; Kugimiya, Katsuhisa...
Japanese Journal of Applied Physics. 61 (2022) SI - p. SI1003 , 2022

Link: https://doi.org/10.35848..

4

Five-step plasma-enhanced atomic layer etching of silicon n..:

Hirata, Akiko ; Fukasawa, Masanaga ; Tercero, Jomar U....
Japanese Journal of Applied Physics. 61 (2022) 6 - p. 066002 , 2022

Link: https://doi.org/10.35848..

5

Damage recovery and low‐damage etching of ITO in H2/CO plas..:

Hirata, Akiko ; Fukasawa, Masanaga ; Kugimiya, Katsuhisa...
Plasma Processes and Polymers. 16 (2019) 9 - p. , 2019

Link: https://doi.org/10.1002/..

6

Cyclic etching of tin-doped indium oxide using hydrogen-ind..:

Hirata, Akiko ; Fukasawa, Masanaga ; Nagahata, Kazunori...
Japanese Journal of Applied Physics. 57 (2018) 6S2 - p. 06JB02 , 2018

Link: https://doi.org/10.7567/..

7

Enhanced etching of tin-doped indium oxide due to surface m..:

Li, Hu ; Karahashi, Kazuhiro ; Friederich, Pascal...
Japanese Journal of Applied Physics. 57 (2018) 6S2 - p. 06JC05 , 2018

Link: https://doi.org/10.7567/..

8

Effects of hydrogen-damaged layer on tin-doped indium oxide..:

Hirata, Akiko ; Fukasawa, Masanaga ; Shigetoshi, Takushi...
Japanese Journal of Applied Physics. 56 (2017) 6S2 - p. 06HD02 , 2017

Link: https://doi.org/10.7567/..

9

Mass-selected ion beam study on etching characteristics of ..:

Li, Hu ; Karahashi, Kazuhiro ; Fukasawa, Masanaga...
Japanese Journal of Applied Physics. 55 (2016) 2 - p. 021202 , 2016

Link: https://doi.org/10.7567/..

10

Advanced simulation technology for etching process design f..:

Kuboi, Nobuyuki ; Fukasawa, Masanaga ; Tatsumi, Tetsuya
Japanese Journal of Applied Physics. 55 (2016) 7S2 - p. 07LA02 , 2016

Link: https://doi.org/10.7567/..

11

Molecular dynamics simulation of silicon oxidation enhanced..:

Mizotani, Kohei ; Isobe, Michiro ; Fukasawa, Masanaga...
Journal of Physics D: Applied Physics. 48 (2015) 15 - p. 152002 , 2015

Link: https://doi.org/10.1088/..

12

Control of SiO2/Si interface defects generation during thin..:

Shigetoshi, Takushi ; Fukasawa, Masanaga ; Nagahata, Kazunori.
Japanese Journal of Applied Physics. 54 (2015) 6S2 - p. 06GB05 , 2015

Link: https://doi.org/10.7567/..

13

Characterization of polymer layer formation during SiO2/SiN..:

Miyake, Keita ; Ito, Tomoko ; Isobe, Michiro...
Japanese Journal of Applied Physics. 53 (2014) 3S2 - p. 03DD02 , 2014

Link: https://doi.org/10.7567/..

14

Wavelength Dependence of Photon-Induced Interface Defects i..:

Fukasawa, Masanaga ; Matsugai, Hiroyasu ; Honda, Takahiro...
Japanese Journal of Applied Physics. 52 (2013) 5S2 - p. 05ED01 , 2013

Link: https://doi.org/10.7567/..

15

Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect..:

Fukasawa, Masanaga ; Miyawaki, Yudai ; Kondo, Yusuke...
Japanese Journal of Applied Physics. 51 (2012) 2R - p. 026201 , 2012

Link: https://doi.org/10.7567/..