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Fukuda, Yukio
510  Ergebnisse:
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1

Interface State Density Evaluation of p‐Type and n‐Type Ge/..:

IWASAKI, TAKURO ; ONO, TOSHIRO ; OTANI, YOHEI..
Electronics and Communications in Japan.  98 (2015)  6 - p. 8-15 , 2015
Link: https://doi.org/10.1002/..
 
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2

Spontaneous formation of aluminum germanate on Ge(100) by a..:

Fukuda, Yukio ; Ishizaki, Hiroki ; Otani, Yohei...
Applied Physics Letters.  102 (2013)  13 - p. , 2013
Link: https://doi.org/10.1063/..
 
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3

Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge..:

Fukuda, Yukio ; Okamoto, Hiroshi ; Iwasaki, Takuro...
Japanese Journal of Applied Physics.  51 (2012)  9R - p. 090204 , 2012
Link: https://doi.org/10.1143/..
 
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4

Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge..:

Fukuda, Yukio ; Okamoto, Hiroshi ; Iwasaki, Takuro...
Japanese Journal of Applied Physics.  51 (2012)  9R - p. 090204 , 2012
Link: https://doi.org/10.7567/..
 
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5

Surface passivation of p-type Ge substrate with high-qualit..:

Fukuda, Yukio ; Okamoto, Hiroshi ; Iwasaki, Takuro..
Applied Physics Letters.  99 (2011)  13 - p. , 2011
Link: https://doi.org/10.1063/..
 
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6

Trap density of GeNx/Ge interface fabricated by electron-cy..:

Fukuda, Yukio ; Otani, Yohei ; Toyota, Hiroshi.
Applied Physics Letters.  99 (2011)  2 - p. , 2011
Link: https://doi.org/10.1063/..
 
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7

Effects of postdeposition annealing ambient on hysteresis i..:

Fukuda, Yukio ; Otani, Yohei ; Sato, Tetsuya..
Journal of Applied Physics.  110 (2011)  2 - p. , 2011
Link: https://doi.org/10.1063/..
 
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8

Formation of Al2O3 Film on Si Substrate by Microwave Genera..:

Ishizaki, Hiroki ; Iida, Masataka ; Otani, Yohei...
ECS Transactions.  33 (2010)  6 - p. 227-233 , 2010
Link: https://doi.org/10.1149/..
 
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9

Formation Mechanism of Oriented Pb(Zr,Ti)O3Thin Films on Pl..:

Otani, Yohei ; Fukuda, Yukio ; Okamura, Soichiro...
Japanese Journal of Applied Physics.  48 (2009)  9 - p. 09KA02 , 2009
Link: https://doi.org/10.1143/..
 
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10

Effects of Electron-Cyclotron-Resonance Oxygen Plasma Irrad..:

Otani, Yohei ; Fukuda, Yukio ; Sato, Tetsuya...
Japanese Journal of Applied Physics.  47 (2008)  9S - p. 7553 , 2008
Link: https://doi.org/10.1143/..
 
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11

Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal..:

Otani, Yohei ; Itayama, Yasuhiro ; Tanaka, Takuo...
Applied Physics Letters.  90 (2007)  14 - p. , 2007
Link: https://doi.org/10.1063/..
 
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12

Electrical Characterization Techniques of Dielectric Thin F..:

Fukuda, Yukio ; Otani, Yohei ; Toyota, Hiroshi.
Japanese Journal of Applied Physics.  46 (2007)  10S - p. 6984 , 2007
Link: https://doi.org/10.1143/..
 
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13

Fabrication of Ferroelectric Pb(Zr,Ti)O3 Thin Films by Spra..:

Otani, Yohei ; Shibuya, Masaki ; Uchiyama, Kiyoshi..
Japanese Journal of Applied Physics.  46 (2007)  7L - p. L706 , 2007
Link: https://doi.org/10.1143/..
 
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14

Characterization of Metal Insulator Metal Electrical Proper..:

Ono, Toshiro ; Kato, Koji ; Toyota, Hiroshi..
Japanese Journal of Applied Physics.  45 (2006)  9S - p. 7345 , 2006
Link: https://doi.org/10.1143/..
 
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15

Electrical Properties of Germanium Oxynitride and Its Inter..:

Fukuda, Yukio ; Kato, Koji ; Toyota, Hiroshi...
Japanese Journal of Applied Physics.  45 (2006)  9S - p. 7351 , 2006
Link: https://doi.org/10.1143/..
 
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