E-LIB Suche - Ergebnisse für: Fukuhara, Noboru

1

Admittance frequency dispersion in lateral AlGaN/GaN Schott..:

Fukuhara, Noboru ; Horikiri, Fumimasa ; Yamamoto, Taiki...
Journal of Applied Physics. 133 (2023) 8 - p. , 2023

2

Mapping of contactless photoelectrochemical etched GaN Scho..:

Shiojima, Kenji ; Matsuda, Ryo ; Horikiri, Fumimasa...
Japanese Journal of Applied Physics. 61 (2022) SC - p. SC1059 , 2022

Link: https://doi.org/10.35848..

3

Characterization of peripheries of n-GaN Schottky contacts ..:

Imabayashi, Hiroki ; Yasui, Yuto ; Horikiri, Fumimasa...
Japanese Journal of Applied Physics. 62 (2022) SA - p. SA1012 , 2022

Link: https://doi.org/10.35848..

4

Self-terminating contactless photo-electrochemical (CL-PEC)..:

Toguchi, Masachika ; Miwa, Kazuki ; Horikiri, Fumimasa...
Journal of Applied Physics. 130 (2021) 2 - p. , 2021

Link: https://doi.org/10.1063/..

5

Uniformity characterization of SiC, GaN, and α-Ga2O3Schottk..:

Shiojima, Kenji ; Kawasumi, Yuto ; Horikiri, Fumimasa...
Japanese Journal of Applied Physics. 60 (2021) 10 - p. 108003 , 2021

Link: https://doi.org/10.35848..

6

Substrate off-angle dependency of Al content in Alx Ga1−x N..:

Fukuhara, Noboru ; Horikiri, Fumimasa ; Narita, Yoshinobu..
Japanese Journal of Applied Physics. 60 (2021) 7 - p. 076505 , 2021

Link: https://doi.org/10.35848..

7

Mapping of photo-electrochemical etched Ni/GaN Schottky con..:

Matsuda, Ryo ; Horikiri, Fumimasa ; Narita, Yoshinobu...
Japanese Journal of Applied Physics. 60 (2021) SB - p. SBBD12 , 2021

Link: https://doi.org/10.35848..

8

Thermal-assisted contactless photoelectrochemical etching f..:

Horikiri, Fumimasa ; Fukuhara, Noboru ; Ohta, Hiroshi...
Applied Physics Express. 13 (2020) 4 - p. 046501 , 2020

Link: https://doi.org/10.35848..

9

Self-termination of contactless photo-electrochemical (PEC)..:

Miwa, Kazuki ; Komatsu, Yuto ; Toguchi, Masachika...
Applied Physics Express. 13 (2020) 2 - p. 026508 , 2020

Link: https://doi.org/10.35848..

10

Electrodeless photo-assisted electrochemical etching of GaN..:

Toguchi, Masachika ; Miwa, Kazuki ; Horikiri, Fumimasa...
Applied Physics Express. 12 (2019) 6 - p. 066504 , 2019

Link: https://doi.org/10.7567/..

11

Simple wet-etching technology for GaN using an electrodeles..:

Horikiri, Fumimasa ; Fukuhara, Noboru ; Ohta, Hiroshi...
Applied Physics Express. 12 (2019) 3 - p. 031003 , 2019

Link: https://doi.org/10.7567/..

12

Formation and reduction of pyramidal hillocks on InGaAs/InP..:

Yamada, Hisashi ; Ichikawa, Osamu ; Fukuhara, Noboru.
physica status solidi (b). 253 (2015) 4 - p. 644-647 , 2015

Link: https://doi.org/10.1002/..

13

Electrical properties of GaAs metal–oxide–semiconductor str..:

Aoki, Takeshi ; Fukuhara, Noboru ; Osada, Takenori...
AIP Advances. 5 (2015) 8 - p. 087149 , 2015

Link: https://doi.org/10.1063/..

14

Three-dimensional conformal arc radiotherapy using a C-arm ..:

Kumabe, Atsuhiro ; Fukuhara, Noboru ; Utsunomiya, Takuji...
Radiation Oncology. 10 (2015) 1 - p. , 2015

Link: https://doi.org/10.1186/..

15

High-performance GaAs-based metal–oxide–semiconductor heter..:

Aoki, Takeshi ; Fukuhara, Noboru ; Osada, Takenori...
Applied Physics Express. 7 (2014) 10 - p. 106502 , 2014

Link: https://doi.org/10.7567/..