E-LIB Suche - Ergebnisse für: Gačević, Ž

1

The effect of annealing treatment on the structural and opt..:

Yevdokymenko, Vladyslav Yu. ; Dobrozhan, O. ; Pshenychnyi, R....
Materials Science in Semiconductor Processing. 161 (2023) - p. 107472 , 2023

Link: https://doi.org/10.1016/..

2

Growth interruption strategies for interface optimization i..:

Braza, V. ; Ben, T. ; Flores, S....
Applied Surface Science. 604 (2022) - p. 154596 , 2022

Link: https://doi.org/10.1016/..

3

(S)TEM methods contributions to improve the fabrication of ..:

Jiménez, J.J. ; Mánuel, J.M. ; Aseev, P....
Journal of Alloys and Compounds. 783 (2019) - p. 697-708 , 2019

Link: https://doi.org/10.1016/..

4

Unravelling the polarity of InN quantum dots using a modifi..:

Rajak, Piu ; Islam, Mahabul ; Jiménez, J. J....
Nanoscale. 11 (2019) 28 - p. 13632-13638 , 2019

Link: https://doi.org/10.1039/..

5

Formation mechanisms of single-crystalline InN quantum dots..:

Aseev, P. ; Gačević, Ž. ; Mánuel, J.M....
Journal of Crystal Growth. 493 (2018) - p. 65-75 , 2018

Link: https://doi.org/10.1016/..

6

Thin GaAsSb capping layers for improved performance of InAs..:

Utrilla, A.D. ; Reyes, D.F. ; Llorens, J.M....
Solar Energy Materials and Solar Cells. 159 (2017) - p. 282-289 , 2017

Link: https://doi.org/10.1016/..

7

Improving optical performance of GaN nanowires grown by sel..:

Aseev, P. ; Gačević, Ž. ; Torres-Pardo, A...
Applied Physics Letters. 108 (2016) 25 - p. , 2016

Link: https://doi.org/10.1063/..

8

A top-gate GaN nanowire metal–semiconductor field effect tr..:

Gačević, Ž. ; López-Romero, D. ; Juan Mangas, T..
Applied Physics Letters. 108 (2016) 3 - p. , 2016

Link: https://doi.org/10.1063/..

9

Impact of alloyed capping layers on the performance of InAs..:

Utrilla, A.D. ; Ulloa, J.M. ; Gačević, Ž....
Solar Energy Materials and Solar Cells. 144 (2016) - p. 128-135 , 2016

Link: https://doi.org/10.1016/..

10

Comparative study of single InGaN layers grown on Si(111) a..:

Gómez, V.J. ; Gačević, Ž. ; Soto-Rodríguez, P.E.D....
Journal of Crystal Growth. 447 (2016) - p. 48-54 , 2016

Link: https://doi.org/10.1016/..

11

Crystallographically uniform arrays of ordered (In)GaN nano..:

Gačević, Ž. ; Bengoechea-Encabo, A. ; Albert, S....
Journal of Applied Physics. 117 (2015) 3 - p. , 2015

Link: https://doi.org/10.1063/..

12

Dynamic control of the optical emission from GaN/InGaN nano..:

Lazić, S. ; Chernysheva, E. ; Gačević, Ž....
AIP Advances. 5 (2015) 9 - p. 097217 , 2015

Link: https://doi.org/10.1063/..

13

Blue-to-green single photons from InGaN/GaN dot-in-a-nanowi..:

Chernysheva, E. ; Gačević, Ž. ; García-Lepetit, N....
EPL (Europhysics Letters). 111 (2015) 2 - p. 24001 , 2015

Link: https://doi.org/10.1209/..

14

Analysis of InAl(Ga)N/GaN wet-etching by structural, morpho..:

Brazzini, T ; Martin-Horcajo, S ; Romero, M F..
Semiconductor Science and Technology. 29 (2014) 7 - p. 075003 , 2014

Link: https://doi.org/10.1088/..

15

Q-factor of (In,Ga)N containing III-nitride microcavity gro..:

Gačević, Ž. ; Rossbach, G. ; Butté, R....
Journal of Applied Physics. 114 (2013) 23 - p. , 2013

Link: https://doi.org/10.1063/..