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X
Galatage, R.
20  Ergebnisse:
Personensuche X
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1

Demonstration of a Stacked CMOS Inverter at 60nm Gate Pitch..:

, In: 2023 International Electron Devices Meeting (IEDM),
Radosavljevic, Marko ; Huang, C.-Y. ; Galatage, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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2

Process Innovations for Future Technology Nodes with Back-S..:

, In: 2023 International Electron Devices Meeting (IEDM),
Kobrinsky, M. ; Silva, J. D ; Mannebach, E.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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3

High quality interfacial layer formation for Si0.75Ge0.25 (..:

Siddiqui, S. ; Galatage, R. ; Zhao, W....
Microelectronic Engineering.  223 (2020)  - p. 111219 , 2020
Link: https://doi.org/10.1016/..
 
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4

Accumulation capacitance frequency dispersion of III-V meta..:

Galatage, R. V. ; Zhernokletov, D. M. ; Dong, H....
Journal of Applied Physics.  116 (2014)  1 - p. , 2014
Link: https://doi.org/10.1063/..
 
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5

Indium diffusion through high-k dielectrics in high-k/InP s..:

Dong, H. ; Cabrera, W. ; Galatage, R. V....
Applied Physics Letters.  103 (2013)  6 - p. , 2013
Link: https://doi.org/10.1063/..
 
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6

Electrical and chemical characteristics of Al2O3/InP metal-..:

Galatage, R. V. ; Dong, H. ; Zhernokletov, D. M....
Applied Physics Letters.  102 (2013)  13 - p. , 2013
Link: https://doi.org/10.1063/..
 
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7

Surface and interfacial reaction study of InAs(100)-crystal..:

Zhernokletov, D. M. ; Laukkanen, P. ; Dong, H....
Applied Physics Letters.  102 (2013)  21 - p. , 2013
Link: https://doi.org/10.1063/..
 
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8

Chemical and electrical characterization of the HfO2/InAlAs..:

Brennan, B. ; Galatage, R. V. ; Thomas, K....
Journal of Applied Physics.  114 (2013)  10 - p. , 2013
Link: https://doi.org/10.1063/..
 
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9

Gate-last TiN/HfO2 band edge effective work functions using..:

Hinkle, C. L. ; Galatage, R. V. ; Chapman, R. A....
Applied Physics Letters.  100 (2012)  15 - p. , 2012
Link: https://doi.org/10.1063/..
 
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10

Remote phonon and surface roughness limited universal elect..:

Sonnet, A.M. ; Galatage, R.V. ; Hurley, P.K....
Microelectronic Engineering.  88 (2011)  7 - p. 1083-1086 , 2011
Link: https://doi.org/10.1016/..
 
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11

Effect of post deposition anneal on the characteristics of ..:

Galatage, R. V. ; Dong, H. ; Zhernokletov, D. M....
Applied Physics Letters.  99 (2011)  17 - p. , 2011
Link: https://doi.org/10.1063/..
 
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12

On the calculation of effective electric field in In0.53Ga0..:

Sonnet, A. M. ; Galatage, R. V. ; Hurley, P. K....
Applied Physics Letters.  98 (2011)  19 - p. , 2011
Link: https://doi.org/10.1063/..
 
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13

Interfacial oxygen and nitrogen induced dipole formation an..:

Hinkle, C. L. ; Galatage, R. V. ; Chapman, R. A....
Applied Physics Letters.  96 (2010)  10 - p. , 2010
Link: https://doi.org/10.1063/..
 
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14

Design and characterization of camptothecin gel for treatme..:

Galatage, Sunil T. ; Hebalkar, Aditya S. ; Gote, Raviraj V....
Future Journal of Pharmaceutical Sciences.  6 (2020)  1 - p. , 2020
Link: https://doi.org/10.1186/..
 
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15

(Invited) III-V/High-k Defects: DIGS vs. Border Traps:

Hinkle, Christopher L. ; Galatage, Rohit V. ; Dong, Hong...
ECS Transactions.  53 (2013)  1 - p. 161-167 , 2013
Link: https://doi.org/10.1149/..
 
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