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Gamiz, F.
250  Ergebnisse:
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1

Experimental analysis of variability in WS2-based devices f..:

Vatalaro, M. ; Neill, H. ; Gity, F....
Solid-State Electronics.  207 (2023)  - p. 108701 , 2023
Link: https://doi.org/10.1016/..
 
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2

3D-TCAD benchmark of two-gate dual-doped Reconfigurable FET..:

Navarro, C. ; Donetti, L. ; Padilla, J.L....
Solid-State Electronics.  200 (2023)  - p. 108577 , 2023
Link: https://doi.org/10.1016/..
 
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3

Towards a DFT-based layered model for TCAD simulations of M..:

Donetti, L. ; Marquez, C. ; Navarro, C....
Solid-State Electronics.  197 (2022)  - p. 108437 , 2022
Link: https://doi.org/10.1016/..
 
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4

DFT-based layered dielectric model of few-layer MoS2:

Donetti, L. ; Navarro, C. ; Marquez, C....
Solid-State Electronics.  194 (2022)  - p. 108346 , 2022
Link: https://doi.org/10.1016/..
 
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5

Performance of FDSOI double-gate dual-doped reconfigurable ..:

Navarro, C. ; Donetti, L. ; Padilla, J.L...
Solid-State Electronics.  194 (2022)  - p. 108336 , 2022
Link: https://doi.org/10.1016/..
 
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6

Memory Operation of Z²-FET Without Selector at High Tempera..:

Kwon, S. ; Navarro, C. ; Gamiz, F....
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 658-662 , 2021
Link: https://doi.org/10.1109/..
 
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7

A thorough study of Si nanowire FETs with 3D Multi-Subband ..:

Donetti, L. ; Sampedro, C. ; Ruiz, F.G...
Solid-State Electronics.  159 (2019)  - p. 19-25 , 2019
Link: https://doi.org/10.1016/..
 
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8

Investigation of thin gate-stack Z2-FET devices as capacito..:

Navarro, S. ; Marquez, C. ; Lee, K.H....
Solid-State Electronics.  159 (2019)  - p. 12-18 , 2019
Link: https://doi.org/10.1016/..
 
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9

TCAD Analysis of III-V capacitor-less A2RAM cells:

, In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),
Navarro, Carlos ; Navarro, Santiago ; Marquez, Carlos. - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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10

A review of the Z 2 -FET 1T-DRAM memory: Operation mechanis..:

Cristoloveanu, S. ; Lee, K.H. ; Parihar, M.S....
Solid-State Electronics.  143 (2018)  - p. 10-19 , 2018
Link: https://doi.org/10.1016/..
 
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11

Confinement-induced InAs/GaSb heterojunction electron–hole ..:

Padilla, J. L. ; Medina-Bailon, C. ; Alper, C...
Applied Physics Letters.  112 (2018)  18 - p. , 2018
Link: https://doi.org/10.1063/..
 
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12

Mechanical and thermal properties of graphene modified asph..:

Moreno-Navarro, F. ; Sol-Sánchez, M. ; Gámiz, F..
Construction and Building Materials.  180 (2018)  - p. 265-274 , 2018
Link: https://doi.org/10.1016/..
 
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13

Multi-Subband Ensemble Monte Carlo simulations of scaled GA..:

Donetti, L. ; Sampedro, C. ; Ruiz, F.G...
Solid-State Electronics.  143 (2018)  - p. 49-55 , 2018
Link: https://doi.org/10.1016/..
 
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14

Ultra-low power 1T-DRAM in FDSOI technology:

El Dirani, H. ; Lee, K.H. ; Parihar, M.S....
Microelectronic Engineering.  178 (2017)  - p. 245-249 , 2017
Link: https://doi.org/10.1016/..
 
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15

Confinement orientation effects in S/D tunneling:

Medina-Bailon, C. ; Sampedro, C. ; Gámiz, F...
Solid-State Electronics.  128 (2017)  - p. 48-53 , 2017
Link: https://doi.org/10.1016/..
 
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