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Garba-Seybou, Tidjani
22  Ergebnisse:
Personensuche X
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1

Universal Dielectric Breakdown Modeling Under Off-State TDD..:

Garba-Seybou, Tidjani ; Bravaix, Alain ; Federspiel, Xavier...
IEEE Transactions on Device and Materials Reliability.  24 (2024)  2 - p. 174-183 , 2024
Link: https://doi.org/10.1109/..
 
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2

Location of Oxide Breakdown Events under Off-state TDDB in ..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Garba-Seybou, Tidjani ; Federspiel, Xavier ; Monsieur, Frederic... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
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3

Current Driven Modeling and SILC Investigation of Oxide Bre..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
Garba-Seybou, Tidjani ; Bravaix, Alain ; Federspiel, Xavier... - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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4

Integrated Test Circuit for Off-State Dynamic Drain Stress ..:

Hai, Joycelyn ; Cacho, Florian ; Federspiel, Xavier...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48203.2023.10117885.  , 2023
Link: https://hal.science/hal-..
 
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5

Integrated Test Circuit for Off-State Dynamic Drain Stress ..:

Hai, Joycelyn ; Cacho, Florian ; Federspiel, Xavier...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48203.2023.10117885.  , 2023
Link: https://hal.science/hal-..
 
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6

Integrated Test Circuit for Off-State Dynamic Drain Stress ..:

Hai, Joycelyn ; Cacho, Florian ; Federspiel, Xavier...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48203.2023.10117885.  , 2023
Link: https://hal.science/hal-..
 
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7

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes:

Garba-Seybou, Tidjani ; Federspiel, Xavier ; Bravaix, Alain.
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764431.  , 2022
Link: https://hal.science/hal-..
 
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8

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes:

Garba-Seybou, Tidjani ; Federspiel, Xavier ; Bravaix, Alain.
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764431.  , 2022
Link: https://hal.science/hal-..
 
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9

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes:

Garba-Seybou, Tidjani ; Federspiel, Xavier ; Bravaix, Alain.
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764431.  , 2022
Link: https://hal.science/hal-..
 
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10

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes:

Garba-Seybou, Tidjani ; Federspiel, Xavier ; Bravaix, Alain.
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764431.  , 2022
Link: https://hal.science/hal-..
 
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11

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes:

Garba-Seybou, Tidjani ; Federspiel, Xavier ; Bravaix, Alain.
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764431.  , 2022
Link: https://hal.science/hal-..
 
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12

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes:

Garba-Seybou, Tidjani ; Federspiel, Xavier ; Bravaix, Alain.
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764431.  , 2022
Link: https://hal.science/hal-..
 
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13

CMOS Scaling Challenges for High Performance and Low Power ..:

Bravaix, A ; Hamparsoumian, G ; Sonzogni, J...
Journal of Physics: Conference Series.  2548 (2023)  1 - p. 012003 , 2023
Link: https://doi.org/10.1088/..
 
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14

Integrated Test Circuit for Off-State Dynamic Drain Stress ..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Hai, J. ; Cacho, F. ; Federspiel, X.... - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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15

Modeling hot carrier damage interaction between on and off ..:

Garba-Seybou, T. ; Bravaix, A. ; Federspiel, X..
Microelectronics Reliability.  126 (2021)  - p. 114342 , 2021
Link: https://doi.org/10.1016/..
 
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