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Germann, R
1121  Ergebnisse:
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1

Hand-arm models for supporting the early validation process..:

Matthiesen, S. ; Mangold, S. ; Germann, R...
Forschung im Ingenieurwesen.  82 (2018)  2 - p. 119-129 , 2018
Link: https://doi.org/10.1007/..
 
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2

H plasma cleaning and a-Si passivation of GaAs for surface ..:

Marchiori, C. ; Webb, D. J. ; Rossel, C....
Journal of Applied Physics.  106 (2009)  11 - p. , 2009
Link: https://doi.org/10.1063/..
 
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3

Von Gierkesche Glykogenose – Erstbeschreibung bei einer Pat..:

Germann, R. ; Schindera, F.
DMW - Deutsche Medizinische Wochenschrift.  121 (2009)  17 - p. 572-573 , 2009
Link: https://doi.org/10.1055/..
 
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4

CMOS Scaling Beyond 22 nm Node:

Sadana, Devendra ; Bedell, Stephen W. ; De Souza, J. P....
ECS Transactions.  19 (2009)  5 - p. 267-274 , 2009
Link: https://doi.org/10.1149/..
 
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5

Inversion mode n-channel GaAs field effect transistor with ..:

de Souza, J. P. ; Kiewra, E. ; Sun, Y....
Applied Physics Letters.  92 (2008)  15 - p. , 2008
Link: https://doi.org/10.1063/..
 
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6

Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_..:

Sun, Yanning ; Kiewra, E. W. ; Koester, S. J....
IEEE Electron Device Letters.  28 (2007)  6 - p. 473-475 , 2007
Link: https://doi.org/10.1109/..
 
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7

Optical properties of epitaxial SrHfO3 thin films grown on ..:

Sousa, M. ; Rossel, C. ; Marchiori, C....
Journal of Applied Physics.  102 (2007)  10 - p. , 2007
Link: https://doi.org/10.1063/..
 
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8

SrHfO3 as gate dielectric for future CMOS technology:

Rossel, C. ; Sousa, M. ; Marchiori, C....
Microelectronic Engineering.  84 (2007)  9-10 - p. 1869-1873 , 2007
Link: https://doi.org/10.1016/..
 
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9

In-situ MBE Si as passivating interlayer on GaAs for HfO2 M..:

Webb, D.J. ; Fompeyrine, J. ; Nakagawa, S....
Microelectronic Engineering.  84 (2007)  9-10 - p. 2142-2145 , 2007
Link: https://doi.org/10.1016/..
 
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10

High Mobility Channels for Ultimate CMOS:

Sadana, Devendra ; Koester, Steve ; Sun, Y...
ECS Transactions.  3 (2006)  2 - p. 343-354 , 2006
Link: https://doi.org/10.1149/..
 
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11

Field-effect transistors with SrHfO3 as gate oxide:

Rossel, C. ; Mereu, B. ; Marchiori, C....
Applied Physics Letters.  89 (2006)  5 - p. , 2006
Link: https://doi.org/10.1063/..
 
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12

Evidence of electron and hole inversion in GaAs metal-oxide..:

Koester, S. J. ; Kiewra, E. W. ; Sun, Yanning...
Applied Physics Letters.  89 (2006)  4 - p. , 2006
Link: https://doi.org/10.1063/..
 
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13

Patient satisfaction with anaesthesia care: development of ..:

Heidegger, T. ; Husemann, Y. ; Nuebling, M....
British Journal of Anaesthesia.  89 (2002)  6 - p. 863-872 , 2002
Link: https://doi.org/10.1093/..
 
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14

Apodised Bragg gratings in planar waveguides for add-drop f..:

David, C. ; Wiesmann, D. ; Germann, R....
Microelectronic Engineering.  57-58 (2001)  - p. 713-719 , 2001
Link: https://doi.org/10.1016/..
 
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15

Mutations in the pterin-4α-carbinolamine dehydratase ( PCBD..:

Thöny, B. ; Neuheiser, F. ; Kierat, L....
Human Genetics.  103 (1998)  2 - p. 162-167 , 1998
Link: https://doi.org/10.1007/..
 
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