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Ghibaudo, Gerard
391  Ergebnisse:
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1

p-type NiOx ultrathin film as highly efficient hole extract..:

Zouknak, Louis David Mohgouk ; Gros-Jean, Mickael ; Blonkowski, Serge..
Solid-State Electronics.  212 (2024)  - p. 108836 , 2024
Link: https://doi.org/10.1016/..
 
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2

Threshold voltage in FD-SOI MOSFETs:

Pananakakis, Georges ; Ghibaudo, Gérard ; Cristoloveanu, Sorin
Solid-State Electronics.  217 (2024)  - p. 108947 , 2024
Link: https://doi.org/10.1016/..
 
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3

Detailed comparison of threshold voltage extraction methods..:

Pananakakis, Georges ; Ghibaudo, Gérard ; Cristoloveanu, Sorin
Solid-State Electronics.  209 (2023)  - p. 108764 , 2023
Link: https://doi.org/10.1016/..
 
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4

Numerical Simulation of Electro-Thermal Properties in FDSOI..:

Ghibaudo, Gerard ; Balestra, Francis
Journal of Electronics and Electrical Engineering.  , 2023
Link: https://doi.org/10.37256..
 
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5

On-Wafer Drain Current Variability in GaN MIS-HEMT on 200-m..:

Kammeugne, Romeo Kom ; Leroux, Charles ; Theodorou, Christoforos...
Journal of Electronics and Electrical Engineering.  , 2023
Link: https://doi.org/10.37256..
 
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6

The core-shell junctionless MOSFET:

Cristoloveanu, Sorin ; Ghibaudo, Gérard
Solid-State Electronics.  200 (2023)  - p. 108567 , 2023
Link: https://doi.org/10.1016/..
 
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7

A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Impr..:

Yin, Jiayu ; Liao, Wenli ; Chen, Chengying.
Active and Passive Electronic Components.  2023 (2023)  - p. 1-11 , 2023
Link: https://doi.org/10.1155/..
 
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8

Performance and Stability Analysis of Built-In Self-Read an..:

Ganesh, Chokkakula ; Noorbasha, Fazal ; Ghibaudo, Gerard
Active and Passive Electronic Components.  2023 (2023)  - p. 1-17 , 2023
Link: https://doi.org/10.1155/..
 
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9

(Invited) Cryogenic Electronics for Quantum Computing ICs: ..:

Casse, Mikael ; Cardoso Paz, Bruna ; Bergamaschi, Flavio...
ECS Transactions.  111 (2023)  1 - p. 149-160 , 2023
Link: https://doi.org/10.1149/..
 
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10

A Low Threshold Voltage Ultradynamic Voltage Scaling SRAM W..:

Janniekode, Uma Maheshwar ; Somineni, Rajendra Prasad ; Ghibaudo, Gerard
Active and Passive Electronic Components.  2023 (2023)  - p. 1-8 , 2023
Link: https://doi.org/10.1155/..
 
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11

Drain Current Variability in 2-levels Stacked Nanowire Gate..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Kim, Donghyun ; Barraud, Sylvain ; Ghibaudo, Gerard.. - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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12

Channel-Width-Dependent Mobility Degradation in Bulk Conduc..:

Jeon, Dae-Young ; Mouis, Mireille ; Barraud, Sylvain.
IEEE Transactions on Electron Devices.  69 (2022)  6 - p. 3037-3041 , 2022
Link: https://doi.org/10.1109/..
 
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13

In Depth Parasitic Capacitance Analysis on GaN-HEMTs with R..:

Kammeugne, Romeo Kom ; Leroux, Charles ; Frutuoso, Tadeu Mota...
Journal of Electronics and Electrical Engineering.  , 2022
Link: https://doi.org/10.37256..
 
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14

Calculation of the mobility in Al2O3/GaN electron channel: ..:

Rrustemi, Bledion ; Triozon, François ; Jaud, Marie-Anne..
Solid-State Electronics.  198 (2022)  - p. 108470 , 2022
Link: https://doi.org/10.1016/..
 
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15

In-depth electrical characterization of deca-nanometer InGa..:

, In: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC),
Di Santa Maria, Francesco Serra ; Theodorou, Christoforos ; Balestra, Francis... - p. 257-260 , 2022
Link: https://doi.org/10.1109/..
 
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