E-LIB Suche - Ergebnisse für: Gleskova, H.

1

Ozone oxidation methods for aluminum oxide formation: Appli..:

Gupta, S. ; Hannah, S. ; Watson, C.P....
Organic Electronics. 21 (2015) - p. 132-137 , 2015

Link: https://doi.org/10.1016/..

2

Paper No P39: Optimizing the Deposition Rate of Vacuum‐Grow..:

Gupta, S. ; Gleskova, H.
SID Symposium Digest of Technical Papers. 44 (2013) S1 - p. 135-138 , 2013

Link: https://doi.org/10.1002/..

3

Structural changes in vapour-assembled n-octylphosphonic ac..:

Gleskova, H. ; Gupta, S. ; Šutta, P.
Organic Electronics. 14 (2013) 11 - p. 3000-3006 , 2013

Link: https://doi.org/10.1016/..

4

Dry growth of n-octylphosphonic acid monolayer for low-volt..:

Gupta, S. ; Gleskova, H.
Organic Electronics. 14 (2013) 1 - p. 354-361 , 2013

Link: https://doi.org/10.1016/..

5

Effect of substrate temperature on vapor-phase self-assembl..:

Gupta, S. ; Šutta, P. ; Lamprou, D.A..
Organic Electronics. 14 (2013) 10 - p. 2468-2475 , 2013

Link: https://doi.org/10.1016/..

6

Photoluminescence, structural and electrical properties of ..:

Pinčı́k, E. ; Kobayashi, H. ; Takahashi, M....
Applied Surface Science. 235 (2004) 3 - p. 351-363 , 2004

Link: https://doi.org/10.1016/..

7

Field-effect mobility of amorphous silicon thin-film transi..:

GLESKOVA, H
Journal of Non-Crystalline Solids. , 2004

Link: https://doi.org/10.1016/..

8

Field-effect mobility of amorphous silicon thin-film transi..:

Gleskova, H. ; Hsu, P.I. ; Xi, Z....
Journal of Non-Crystalline Solids. 338-340 (2004) - p. 732-735 , 2004

Link: https://doi.org/10.1016/..

9

Photoluminescence properties of a-Si:H based thin films and..:

Pinčı́k, E. ; Kobayashi, H. ; Glesková, H....
Thin Solid Films. 433 (2003) 1-2 - p. 344-351 , 2003

Link: https://doi.org/10.1016/..

10

43.3: A Rugged Conformable Backplane Fabricated with an a‐S..:

Forbes, C. E. ; Gelbman, A. ; Turner, C...
SID Symposium Digest of Technical Papers. 33 (2002) 1 - p. 1200-1203 , 2002

Link: https://doi.org/10.1889/..

11

Properties of semiconductor surfaces covered with very thin..:

Pinčı́k, E ; Glesková, H ; Müllerová, J...
Vacuum. 67 (2002) 1 - p. 131-141 , 2002

Link: https://doi.org/10.1016/..

12

Electrical response of amorphous silicon thin-film transist..:

Gleskova, H. ; Wagner, S. ; Soboyejo, W..
Journal of Applied Physics. 92 (2002) 10 - p. 6224-6229 , 2002

Link: https://doi.org/10.1063/..

13

Amorphous Si TFTs on plastically deformed spherical domes:

Hsu, P.I ; Gleskova, H ; Huang, M...
Journal of Non-Crystalline Solids. 299-302 (2002) - p. 1355-1359 , 2002

Link: https://doi.org/10.1016/..

14

Thin-film transistor circuits on large-area spherical surfa..:

Hsu, P. I. ; Bhattacharya, R. ; Gleskova, H....
Applied Physics Letters. 81 (2002) 9 - p. 1723-1725 , 2002

Link: https://doi.org/10.1063/..

15

Low-temperature silicon nitride for thin-film electronics o..:

Gleskova, H. ; Wagner, S. ; Gašparı́k, V..
Applied Surface Science. 175-176 (2001) - p. 12-16 , 2001

Link: https://doi.org/10.1016/..