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Gnudi, Antonio
79  Ergebnisse:
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1

Breakdown-Voltage Degradation Under AC Stress of Thick SiO2..:

Giuliano, Federico ; Reggiani, Susanna ; Gnani, Elena...
IEEE Transactions on Electron Devices.  70 (2023)  9 - p. 4953-4957 , 2023
Link: https://doi.org/10.1109/..
 
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2

Thickness-dependent dielectric breakdown in thick amorphous..:

Giuliano, Federico ; Reggiani, Susanna ; Gnani, Elena...
Solid-State Electronics.  194 (2022)  - p. 108363 , 2022
Link: https://doi.org/10.1016/..
 
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3

Characterization and numerical analysis of breakdown in thi..:

Giuliano, Federico ; Reggiani, Susanna ; Gnani, Elena...
Solid-State Electronics.  192 (2022)  - p. 108256 , 2022
Link: https://doi.org/10.1016/..
 
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4

Application of the k ⋅ p Method to Device Simulation:

, In: Springer Handbook of Semiconductor Devices; Springer Handbooks,
Gnudi, Antonio ; Gnani, Elena ; Reggiani, Susanna. - p. 1491-1514 , 2022
Link: https://doi.org/10.1007/..
 
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5

An embedded PCM Peripheral Unit adding Analog MAC In-Memory..:

, In: ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC),
Antolini, Alessio ; Lico, Andrea ; Scarselli, Eleonora Franchi... - p. 109-112 , 2022
Link: https://doi.org/10.1109/..
 
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6

Group velocity of electrons in 4H-SiC from Density Function..:

Balestra, Luigi ; Reggiani, Susanna ; Gnani, Elena.
Solid-State Electronics.  194 (2022)  - p. 108338 , 2022
Link: https://doi.org/10.1016/..
 
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7

On the breakdown voltage temperature dependence of high-vol..:

Balestra, Luigi ; Reggiani, Susanna ; Gnudi, Antonio...
Solid-State Electronics.  193 (2022)  - p. 108284 , 2022
Link: https://doi.org/10.1016/..
 
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8

Constant-current time dependent dielectric breakdown in thi..:

, In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS),
Giuliano, Federico ; Reggiani, Susanna ; Gnani, Elena... - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
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9

A Gated Oscillator Clock and Data Recovery Circuit for Nano..:

D'Addato, Matteo ; Elgani, Alessia M. ; Perilli, Luca...
Electronics.  10 (2021)  7 - p. 780 , 2021
Link: https://doi.org/10.3390/..
 
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10

Characterization and Programming Algorithm of Phase Change ..:

Antolini, Alessio ; Franchi Scarselli, Eleonora ; Gnudi, Antonio...
Materials.  14 (2021)  7 - p. 1624 , 2021
Link: https://doi.org/10.3390/..
 
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11

Nanowatt Clock and Data Recovery for Ultra-Low Power Wake-U..:

, In: Proceedings of the 2020 International Conference on Embedded Wireless Systems and Networks on Proceedings of the 2020 International Conference on Embedded Wireless Systems and Networks,
D'Addato, Matteo ; Antolini, Alessio ; Renzini, Francesco... - p. 224-229 , 2020
Link: https://dl.acm.org/doi/1..
 
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12

Electron mobility of strained InGaAs long-channel MOSFETs: ..:

Carapezzi, Stefania ; Reggiani, Susanna ; Gnani, Elena.
Solid-State Electronics.  172 (2020)  - p. 107902 , 2020
Link: https://doi.org/10.1016/..
 
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13

Numerical Investigation of the Leakage Current and Blocking..:

, In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Balestra, Luigi ; Reggiani, Susanna ; Gnudi, Antonio... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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14

Design guidelines for GaSb/InAs TFET exploiting strain and ..:

Visciarelli, Michele ; Gnani, Elena ; Gnudi, Antonio..
Solid-State Electronics.  129 (2017)  - p. 157-162 , 2017
Link: https://doi.org/10.1016/..
 
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15

Comprehensive comparison and experimental validation of ban..:

Zerveas, George ; Caruso, Enrico ; Baccarani, Giorgio...
Solid-State Electronics.  115 (2016)  - p. 92-102 , 2016
Link: https://doi.org/10.1016/..
 
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