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Goes, W.
545  Ergebnisse:
Personensuche X
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1

Influence of Interface Exchange Coupling in Multilayered Sp..:

, In: 2024 47th MIPRO ICT and Electronics Convention (MIPRO),
Bendra, M. ; de Orio, R.L. ; Selberherr, S... - p. 1579-1583 , 2024
Link: https://doi.org/10.1109/..
 
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2

Field-Free Perpendicular Magnetization Switching of SOT-MRA..:

, In: 2024 47th MIPRO ICT and Electronics Convention (MIPRO),
Pruckner, B. ; Jorstad, N. ; Hadamek, T.... - p. 1584-1589 , 2024
Link: https://doi.org/10.1109/..
 
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3

Micromagnetic modeling of double spin-torque magnetic tunne..:

Pruckner, B. ; Fiorentini, S. ; Goes, W...
Physica B: Condensed Matter.  688 (2024)  - p. 416124 , 2024
Link: https://doi.org/10.1016/..
 
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4

A multi-level cell for ultra-scaled STT-MRAM realized by ba..:

Bendra, M. ; Fiorentini, S. ; Selberherr, S...
Solid-State Electronics.  208 (2023)  - p. 108738 , 2023
Link: https://doi.org/10.1016/..
 
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5

The influence of interface effects on the switching behavio..:

Bendra, M. ; Fiorentini, S. ; Goes, W...
Solid-State Electronics.  201 (2023)  - p. 108590 , 2023
Link: https://doi.org/10.1016/..
 
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6

Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox ..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Hirchaou, Y. ; Goes, W. ; Hylin, C.... - p. 333-336 , 2023
Link: https://doi.org/10.23919..
 
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7

Comprehensive evaluation of torques in ultra-scaled MRAM de..:

Fiorentini, S. ; Ender, J. ; Selberherr, S....
Solid-State Electronics.  199 (2023)  - p. 108491 , 2023
Link: https://doi.org/10.1016/..
 
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8

Back-Hopping in Ultra-Scaled MRAM Cells:

, In: 2023 46th MIPRO ICT and Electronics Convention (MIPRO),
Bendra, M. ; Fiorentini, S. ; Ender, J.... - p. 159-162 , 2023
Link: https://doi.org/10.23919..
 
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9

Spin Transfer Torques in Ultra-Scaled MRAM Cells:

, In: 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO),
Bendra, M. ; Fiorentini, S. ; Ender, J.... - p. 129-132 , 2022
Link: https://doi.org/10.23919..
 
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10

Modeling advanced spintronic based magnetoresistive memory:

, In: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022),
Fiorentini, S. ; Bendra, M. ; Ender, J.... - p. None , 2022
Link: https://doi.org/10.1049/..
 
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11

Interface effects in ultra-scaled MRAM cells:

Bendra, M. ; Fiorentini, S. ; Goes, W...
Solid-State Electronics.  194 (2022)  - p. 108373 , 2022
Link: https://doi.org/10.1016/..
 
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12

Temperature increase in STT-MRAM at writing: A fully three-..:

Hadámek, T. ; Fiorentini, S. ; Bendra, M....
Solid-State Electronics.  193 (2022)  - p. 108269 , 2022
Link: https://doi.org/10.1016/..
 
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13

Numerical Analysis of Deterministic Switching of a Perpendi..:

de Orio, R. L. ; Ender, J. ; Fiorentini, S....
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 61-67 , 2021
Link: https://doi.org/10.1109/..
 
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14

A Comprehensive Oxide-Based ReRAM TCAD Model with Experimen..:

, In: 2021 IEEE International Memory Workshop (IMW),
Goes, W. ; Green, D. ; Blaise, P.... - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
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15

Two-pulse switching scheme and reinforcement learning for e..:

de Orio, R.L. ; Ender, J. ; Fiorentini, S....
Solid-State Electronics.  185 (2021)  - p. 108075 , 2021
Link: https://doi.org/10.1016/..
 
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