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Goh, Youngin
19  Ergebnisse:
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1

Dual-Mode Operations of Self-Rectifying Ferroelectric Tunne..:

Lim, Sehee ; Goh, Youngin ; Lee, Young Kyu...
IEEE Journal of Solid-State Circuits.  58 (2023)  7 - p. 1860-1870 , 2023
Link: https://doi.org/10.1109/..
 
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2

Oxygen Vacancy Control as a Strategy to Enhance Imprinting ..:

Jeong, Yeongseok ; Gaddam, Venkateswarlu ; Goh, Youngin...
IEEE Transactions on Electron Devices.  70 (2023)  1 - p. 354-359 , 2023
Link: https://doi.org/10.1109/..
 
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3

Physics, Structures, and Applications of Fluorite‐Structure..:

Hwang, Junghyeon ; Goh, Youngin ; Jeon, Sanghun
Small.  20 (2023)  9 - p. , 2023
Link: https://doi.org/10.1002/..
 
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4

A method of controlling the imprint effect in hafnia ferroe..:

Shin, Hunbeom ; Gaddam, Venkateswarlu ; Goh, Youngin...
Applied Physics Letters.  122 (2023)  2 - p. , 2023
Link: https://doi.org/10.1063/..
 
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5

Relatively Low-k Ferroelectric Nonvolatile Memory Using Fas..:

Hwang, Junghyeon ; Kim, Minki ; Jung, Minhyun...
IEEE Transactions on Electron Devices.  69 (2022)  6 - p. 3439-3445 , 2022
Link: https://doi.org/10.1109/..
 
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6

A Highly Integrated Crosspoint Array Using Self-rectifying ..:

, In: ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC),
Lim, Sehee ; Goh, Youngin ; Lee, Young Kyu... - p. 113-116 , 2022
Link: https://doi.org/10.1109/..
 
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7

Selector-less Ferroelectric Tunnel Junctions by Stress Engi..:

Goh, Youngin ; Hwang, Junghyeon ; Kim, Minki...
ACS Applied Materials & Interfaces.  13 (2021)  49 - p. 59422-59430 , 2021
Link: https://doi.org/10.1021/..
 
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8

Enabling large ferroelectricity and excellent reliability f..:

Kim, Minki ; Goh, Youngin ; Hwang, Junghyeon.
Applied Physics Letters.  119 (2021)  26 - p. , 2021
Link: https://doi.org/10.1063/..
 
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9

Flexible Ferroelectric Hafnia-Based Synaptic Transistor by ..:

Joh, Hongrae ; Jung, Minhyun ; Hwang, Junghyeon...
ACS Applied Materials & Interfaces.  14 (2021)  1 - p. 1326-1333 , 2021
Link: https://doi.org/10.1021/..
 
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10

High Performance and Self-rectifying Hafnia-based Ferroelec..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Goh, Youngin ; Hwang, Junghyeon ; Kim, Minki... - p. 17.2.1-17.2.4 , 2021
Link: https://doi.org/10.1109/..
 
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11

Excellent Reliability and High-Speed Antiferroelectric HfZr..:

Goh, Youngin ; Hwang, Junghyeon ; Jeon, Sanghun
ACS Applied Materials & Interfaces.  12 (2020)  51 - p. 57539-57546 , 2020
Link: https://doi.org/10.1021/..
 
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12

Oxygen vacancy control as a strategy to achieve highly reli..:

Goh, Youngin ; Cho, Sung Hyun ; Park, Sang-Hee Ko.
Nanoscale.  12 (2020)  16 - p. 9024-9031 , 2020
Link: https://doi.org/10.1039/..
 
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13

Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunne..:

Goh, Youngin ; Hwang, Junghyeon ; Lee, Yongsun..
Applied Physics Letters.  117 (2020)  24 - p. , 2020
Link: https://doi.org/10.1063/..
 
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14

Enhanced tunneling electroresistance effects in HfZrO-based..:

Goh, Youngin ; Jeon, Sanghun
Applied Physics Letters.  113 (2018)  5 - p. , 2018
Link: https://doi.org/10.1063/..
 
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15

Defects and Charge-Trapping Mechanisms of Double-Active-Lay..:

Goh, Youngin ; Kim, Taeho ; Yang, Jong-Heon...
ACS Applied Materials & Interfaces.  9 (2017)  11 - p. 9271-9279 , 2017
Link: https://doi.org/10.1021/..
 
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