E-LIB Suche - Ergebnisse für: Goiffon, V.

1

Toward the Development of High-Performance Direct Electron ..:

Marcelot, O. ; Marcelot, C. ; Goiffon, V.
IEEE Transactions on Electron Devices. 71 (2024) 4 - p. 2465-2471 , 2024

Link: https://doi.org/10.1109/..

2

Design Techniques Evaluation to Mitigate RTS Noise Effect i..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

da Cunha, M. Gouveia ; Place, S. ; Gauthier, O.... - p. P67.TX-1-P67.TX-6 , 2024

Link: https://doi.org/10.1109/..

3

Quantum Modeling of Semiconductors Leakage Currents Induced..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),

Jay, A. ; Mesnard, C. ; Nicholson, I.... - p. 141-144 , 2023

Link: https://doi.org/10.23919..

4

Dark Current Evolution in Irradiated MWIR HgCdTe Photodiode:

Dinand, S. ; Gravrand, O. ; Baier, N....
Journal of Electronic Materials. 52 (2023) 11 - p. 7103-7113 , 2023

Link: https://doi.org/10.1007/..

5

A new TCAD simulation method for direct CMOS electron detec..:

Marcelot, O. ; Marcelot, C. ; Corbière, F....
Ultramicroscopy. 243 (2023) - p. 113628 , 2023

Link: https://doi.org/10.1016/..

6

Radiation vulnerability of standard and radiation-hardened ..:

Allanche, T. ; Muller, C. ; Paillet, P....
Journal of Non-Crystalline Solids. 585 (2022) - p. 121531 , 2022

Link: https://doi.org/10.1016/..

7

Apprentissage de la conception de circuits intégrés : une i..:

Lincelles, JB. ; Goiffon, V. ; Respaud, M.
J3eA. 21 (2022) - p. 1010 , 2022

Link: https://doi.org/10.1051/..

8

TCAD Calibration at Cryogenic Temperatures for CMOS Image S..:

Marcelot, O. ; Panglosse, A. ; Martin-Gonthier, P..
IEEE Transactions on Electron Devices. 69 (2022) 11 - p. 6188-6194 , 2022

Link: https://doi.org/10.1109/..

9

Junction Leakage Random Telegraph Signals in Arrays of MOSF..:

Dewitte, H. ; Goiffon, V. ; Le Roch, A....
IEEE Electron Device Letters. 42 (2021) 11 - p. 1650-1653 , 2021

Link: https://doi.org/10.1109/..

10

Investigations of the MGy dose level radiation effects on t..:

Muller, C. ; Allanche, T. ; Paillet, P....
Applied Optics. 58 (2019) 22 - p. 6165 , 2019

Link: https://doi.org/10.1364/..

11

A Highly Reliable Back Side Illuminated Pixel against Plasm..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),

Sacchettini, Y. ; Carrere, J.-P. ; Doyen, C.... - p. 16.5.1-16.5.4 , 2019

Link: https://doi.org/10.1109/..

12

Vulnerability of CMOS image sensors in megajoule class lase..:

Goiffon, V. ; Girard, S. ; Chabane, A....
Optics Express. 20 (2012) 18 - p. 20028 , 2012

Link: https://doi.org/10.1364/..

13

Ionization versus displacement damage effects in proton irr..:

Goiffon, V. ; Magnan, P. ; Saint-Pé, O...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 610 (2009) 1 - p. 225-229 , 2009

Link: https://doi.org/10.1016/..

14

Radiation vulnerability of standard and radiation-hardened ..:

Allanche, T ; Muller, C ; Paillet, P...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jnoncrysol.2022.121531. , 2022

Link: https://hal.science/hal-..

15

Radiation vulnerability of standard and radiation-hardened ..:

Allanche, T ; Muller, C ; Paillet, P...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jnoncrysol.2022.121531. , 2022

Link: https://hal.science/hal-..