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Gong, Hehe
69  Ergebnisse:
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1

Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojuncti..:

Gong, Hehe ; Zhou, Feng ; Xiao, Ming...
IEEE Electron Device Letters.  45 (2024)  8 - p. 1421-1424 , 2024
Link: https://doi.org/10.1109/..
 
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2

Kilovolt, Low-Barrier Ga2O3 JBS diode with Ultra-Low Forwar..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Gong, Hehe ; Sun, Na ; Hu, Tiancheng... - p. 104-107 , 2024
Link: https://doi.org/10.1109/..
 
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3

Ga2O3/NiO junction barrier Schottky diodes with ultra-low b..:

Gong, Hehe ; Sun, Na ; Hu, Tiancheng...
Applied Physics Letters.  124 (2024)  23 - p. , 2024
Link: https://doi.org/10.1063/..
 
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4

Ga2O3 Bipolar Heterojunction-Based Optoelectronic Synapse A..:

Xu, Ke ; Peng, Baocheng ; Mao, Huiwu...
The Journal of Physical Chemistry Letters.  15 (2024)  2 - p. 556-564 , 2024
Link: https://doi.org/10.1021/..
 
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5

2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier..:

Wang, Zhizhong ; Huang, Fuping ; Chu, Chunshuang...
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3811-3817 , 2024
Link: https://doi.org/10.1109/..
 
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6

Low turn-on voltage and 2.3 kVβ-Ga2O3 heterojunction barrie..:

Su, Chunxu ; Zhou, Hong ; Zhang, Kun...
Applied Physics Letters.  124 (2024)  17 - p. , 2024
Link: https://doi.org/10.1063/..
 
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7

1.43 kV GaN-based MIS Schottky barrier diodes:

Huang, Fuping ; Chu, Chunshuang ; Wang, Zhizhong...
Journal of Physics D: Applied Physics.  57 (2024)  18 - p. 185102 , 2024
Link: https://doi.org/10.1088/..
 
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8

Monolithically Integrated Logic Circuits Based on p-NiO Gat..:

Pan, Chuanqi ; Yu, Xinxin ; Li, Fan...
IEEE Electron Device Letters.  45 (2024)  2 - p. 164-167 , 2024
Link: https://doi.org/10.1109/..
 
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9

High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted ..:

Yu, Xinxin ; Gong, Hehe ; Zhou, Jianjun...
IEEE Electron Device Letters.  44 (2023)  7 - p. 1060-1063 , 2023
Link: https://doi.org/10.1109/..
 
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10

An avalanche-and-surge robust ultrawide-bandgap heterojunct..:

Zhou, Feng ; Gong, Hehe ; Xiao, Ming...
Nature Communications.  14 (2023)  1 - p. , 2023
Link: https://doi.org/10.1038/..
 
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11

5 A/1.17 kV NiO/$\beta$-Ga2O3 heterojunction power rectifie..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Wang, Zhengpeng ; Gong, Hehe ; Yu, Xinxin... - p. 326-329 , 2023
Link: https://doi.org/10.1109/..
 
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12

Gallium oxide (Ga2O3) heterogeneous and heterojunction powe..:

Li, Bochang ; Wang, Yibo ; Luo, Zhengdong...
Fundamental Research.  , 2023
Link: https://doi.org/10.1016/..
 
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13

Low density of interface trap states and temperature depend..:

Yan, Qinglong ; Gong, Hehe ; Zhou, Hong...
Applied Physics Letters.  120 (2022)  9 - p. , 2022
Link: https://doi.org/10.1063/..
 
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14

Photoconductive and photovoltaic metal-semiconductor-metal ..:

Cui, Mei ; Xu, Yang ; Sun, Xinyu...
Journal of Physics D: Applied Physics.  55 (2022)  39 - p. 394003 , 2022
Link: https://doi.org/10.1088/..
 
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15

Current transport dynamics and stability characteristics of..:

Du, Yonghao ; Xu, Weizong ; Gong, Hehe...
Journal of Physics D: Applied Physics.  55 (2022)  47 - p. 474001 , 2022
Link: https://doi.org/10.1088/..
 
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