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Gorbachuk, Nikolay I.
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Personensuche X
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1

DLTS spectra of silicon diodes with p+-n-junction irradiate..:

Poklonski, Nikolai A. ; Gorbachuk, Nikolay I. ; Shpakovski, Sergey V....
Modern Electronic Materials.  2 (2016)  2 - p. 48-50 , 2016
Link: https://doi.org/10.1016/..
 
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2

About the Role of Graphene-like Carbon in the Formation of ..:

Alexander I. Komarov ; Polina S. Zolotaya ; Nikolay I. Gorbachuk
http://mmmm.by/en/readers-en/archive-room-en?layout=edit&id=1552.  , 2020
Link: https://doaj.org/article..
 
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3

DLTS spectra of silicon diodes with p+-n-junction irradiate..:

Nikolai A. Poklonski ; Nikolay I. Gorbachuk ; Sergey V. Shpakovski...
http://www.sciencedirect.com/science/article/pii/S2452177916300494.  , 2016
Link: https://doi.org/10.1016/..
 
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4

Formation of radiation-disturbed layer in Al/SiO2/n-Si stru..:

Nha, V. Q. ; Thang, L. V. ; Thuy Linh, H. T...
Hue University Journal of Science: Natural Science.  129 (2020)  1D - p. 71-75 , 2020
Link: https://doi.org/10.26459..
 
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5

Structure and Dielectric Properties of Bi0.80Gd0.20–xLaxFeO..:

Makoed, I. I. ; Ravinski, A. F. ; Gorbachuk, N. I....
Bulletin of the Russian Academy of Sciences: Physics.  82 (2018)  5 - p. 570-573 , 2018
Link: https://doi.org/10.3103/..
 
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6

Optical spectroscopy of the surface of nanoporous diamond f..:

Khomich, A. V. ; Kanzyuba, M. V. ; Vlasov, I. I...
Journal of Applied Spectroscopy.  78 (2011)  4 - p. 563-571 , 2011
Link: https://doi.org/10.1007/..
 
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7

Impedance of Si/SiO2 composites in the vicinity of the perc..:

Poklonski, N. A. ; Gorbachuk, N. I. ; Aleinikova, D.
Physics of the Solid State.  53 (2011)  3 - p. 462-466 , 2011
Link: https://doi.org/10.1134/..
 
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8

On holomorphic solutions of some inhomogeneous linear diffe..:

Gorbachuk, V. I. ; Gorbachuk, V. M.
P-Adic Numbers, Ultrametric Analysis, and Applications.  2 (2010)  2 - p. 114-121 , 2010
Link: https://doi.org/10.1134/..
 
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9

Impedance and barrier capacitance of silicon diodes implant..:

Poklonski, N.A. ; Gorbachuk, N.I. ; Shpakovski, S.V....
Microelectronics Reliability.  50 (2010)  6 - p. 813-820 , 2010
Link: https://doi.org/10.1016/..
 
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10

Equivalent circuit of silicon diodes subjected to high-flue..:

Poklonski, N. A. ; Gorbachuk, N. I. ; Shpakovski, S. V..
Technical Physics.  55 (2010)  10 - p. 1463-1471 , 2010
Link: https://doi.org/10.1134/..
 
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11

Influence of radiation defects on electrical losses in sili..:

Poklonski, N. A. ; Gorbachuk, N. I. ; Shpakovski, S. V...
Semiconductors.  44 (2010)  3 - p. 380-384 , 2010
Link: https://doi.org/10.1134/..
 
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12

The dependence of the conductivity of SiO2-γ-Fe2O3 film com..:

Adakimchik, A. V. ; Gorbachuk, N. I. ; Ivanovskaya, M. I....
Russian Journal of Physical Chemistry A.  84 (2010)  4 - p. 684-688 , 2010
Link: https://doi.org/10.1134/..
 
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13

Kinetics of reverse resistance recovery of silicon diodes: ..:

Poklonski, N.A. ; Gorbachuk, N.I. ; Shpakovski, S.V....
Physica B: Condensed Matter.  404 (2009)  23-24 - p. 4667-4670 , 2009
Link: https://doi.org/10.1016/..
 
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14

On solutions of elliptic-type differential equations in a B..:

Gorbachuk, M. L. ; Gorbachuk, V. I.
Journal of Mathematical Sciences.  162 (2009)  1 - p. 6-21 , 2009
Link: https://doi.org/10.1007/..
 
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15

Electrical properties of silicon diodes with p+n junctions ..:

Poklonski, N.A. ; Gorbachuk, N.I. ; Shpakovski, S.V....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  266 (2008)  23 - p. 5007-5012 , 2008
Link: https://doi.org/10.1016/..
 
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